DMT3009LFVW
30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8 (SWP) (Type UX)
Product Summary
ADVANCE INFORMATION
ADVANCED INFORMATION
ADVANCED INFORMATION
BV
DSS
R
DS(ON)
Max
11m @ V
GS
= 10V
30V
13m @ V
GS
= 4.5V
45A
I
D
Max
T
C
= +25°
C
50A
Features and Benefits
Low R
DS(ON)
– Ensures On State Losses Are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of The Board Area Occupied by SO-8
Enabling Smaller End Product
Wettable Flank for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMT3009LFVWQ)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: PowerDI 3333-8 (SWP) (Type UX)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.03 grams (Approximate)
®
PowerDI3333-8 (SWP) (Type UX)
D
D
D
D
D
G
S
S
S
Pin1
G
S
Equivalent Circuit
Top View
Bottom View
Ordering Information
(Note 4)
Part Number
DMT3009LFVW-7
DMT3009LFVW-13
Notes:
Case
PowerDI3333-8 (SWP) (Type UX)
PowerDI3333-8 (SWP) (Type UX)
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
YYWW
SH9= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
SH9
PowerDI is a registered trademark of Diodes Incorporated.
DMT3009LFVW
Document number: DS39728 Rev. 4 - 2
1 of 7
www.diodes.com
August 2018
© Diodes Incorporated
DMT3009LFVW
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
T
A
= +25°
C
T
A
= +70°
C
T
C
= +25°
C
T
C
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
SM
I
AS
E
AS
Value
30
±20
12
10
50
37
3
90
90
19
19
Unit
V
V
A
A
A
A
A
A
mJ
ADVANCE INFORMATION
ADVANCED INFORMATION
ADVANCED INFORMATION
Continuous Drain Current V
GS
= 10V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 8)
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
T
A
= +25°
C
Steady State
T
C
= +25°
C
Steady State
Symbol
P
D
R
JA
P
D
R
JC
T
J,
T
STG
Value
2.3
55
35.7
3.5
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
6.6
10.5
13.4
0.8
823
352
52
1.2
5.8
12
1.7
2.4
3.2
5.2
8.9
1.5
16.4
5.9
Max
-
1
±100
3
11
13
20
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 14.4A
V
GS
= 4.5V, I
D
= 7A
V
GS
= 3.8V, I
D
= 5A
V
GS
= 0V, I
S
= 10A
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 15V, I
D
= 14.4A
V
GS
= 10V, V
DD
= 15V,
R
G
= 1, I
D
= 10A
I
F
= 10A, dI/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
DMT3009LFVW
Document number: DS39728 Rev. 4 - 2
2 of 7
www.diodes.com
August 2018
© Diodes Incorporated
DMT3009LFVW
50.0
45.0
V
GS
= 10.0V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.5V
I
D
, DRAIN CURRENT (A)
25
30
V
DS
= 5.0V
ADVANCE INFORMATION
ADVANCED INFORMATION
ADVANCED INFORMATION
40.0
I
D
, DRAIN CURRENT (A)
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0
0.5
20
15
V
GS
= 3.0V
10
T
J
=150℃
T
J
=125℃
0
T
J
=85℃
T
J
=25℃
T
J
=-55℃
2
3
4
5
6
V
GS
= 2.2V
V
GS
= 2.5V
V
GS
= 2.7V
5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1.Typical Output Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS
= 10V
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
2
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
I
D
= 11.5A
I
D
= 7.0A
6
8
10
12
14
16
18
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
V
GS
=10V
T
J
=150℃
T
J
=125℃
T
J
=85℃
T
J
=25℃
T
J
=-55℃
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS
= 10V, I
D
= 11.5A
V
GS
= 4.5V, I
D
= 7.0A
DMT3009LFVW
Document number: DS39728 Rev. 4 - 2
3 of 7
www.diodes.com
August 2018
© Diodes Incorporated
DMT3009LFVW
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
0.02
3.5
3
2.5
2
1.5
1
0.5
0
-50
-25
0
25
50
75
100
125
150
-50
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
-25
I
D
= 250μA
I
D
= 1mA
ADVANCE INFORMATION
ADVANCED INFORMATION
ADVANCED INFORMATION
0.015
V
GS
= 4.5V, I
D
= 7.0A
0.01
0.005
V
GS
= 10V, I
D
= 11.5A
0
30
25
I
S
, SOURCE CURRENT (A)
20
15
10
5
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
J
= 85℃
T
J
= 25℃
T
J
= 125℃
T
J
= -55℃
C
T
, JUNCTION CAPACITANCE (pF)
V
GS
= 0V
10000
f=1MHz
1000
C
iss
C
oss
100
C
rss
T
J
= 150℃
10
1
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
30
10
9
I
D
, DRAIN CURRENT (A)
8
7
6
V
GS
(V)
5
4
3
2
1
0
0
2
4
6
8
10
12
Qg (nC)
Figure 11. Gate Charge
V
DS
= 15V, I
D
= 14.4A
100
R
DS(ON)
LIMITED
10
1
P
W
=100µs
P
W
=1ms
P
W
=10ms
T
J(MAX)
=150℃
T
C
=25℃
Single Pulse
DUT on
1*MRP board
V
GS
=10V
0.1
P
W
=100ms
P
W
=1s
P
W
=10s
DC
1
10
100
0.1
0.01
0.01
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
DMT3009LFVW
Document number: DS39728 Rev. 4 - 2
4 of 7
www.diodes.com
August 2018
© Diodes Incorporated
DMT3009LFVW
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.7
D=0.9
ADVANCE INFORMATION
ADVANCED INFORMATION
ADVANCED INFORMATION
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 123℃/W
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMT3009LFVW
Document number: DS39728 Rev. 4 - 2
5 of 7
www.diodes.com
August 2018
© Diodes Incorporated
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