1N5819HR1G datasheet, PDF - EEWORLD Datasheet

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1N5819HR1G: DescriptionDIODE SCHOTTKY 40V 1A DO204AL; CategoryDiscrete semiconductor diode; File Size167KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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1N5819HR1G Overview

DIODE SCHOTTKY 40V 1A DO204AL

1N5819HR1G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	O-PALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-204AL
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	40 V
surface mount	NO
technology	SCHOTTKY
Terminal surface	Tin (Sn)
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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1N5817 - 1N5819

Taiwan Semiconductor

CREAT BY ART

1A, 20V - 40V Schottky Barrier Rectifiers

FEATURES

- Low forward voltage drop

- Guardring for overvoltage protection

- High surge current capability

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21

MECHANICAL DATA

Case:

DO-204AL (DO-41)

Molding compound, UL flammability classification rating 94V-0

Part no. with suffix "H" means AEC-Q101 qualified

Packing code with suffix "G" means green compound (halogen-free)

Terminal:

Pure tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 2 whisker test

Polarity:

Indicated by cathode band

Weight:

0.33 gram (approximately)

DO-204AL (DO-41)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25°C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

Maximum instantaneous forward voltage (Note 1)

@1A

Maximum reverse current @ rated VR

Typical junction capacitance (Note 2)

Voltage rate of change (Rated V

)

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: Pulse test with PW=300

μs,

1% duty cycle

Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.

=25°C

=100°C

SYMBOL

RRM

RMS

F(AV)

FSM

dV/dt

θJC

θJA

STG

0.45

1N5817

1N5818

0.55

10000

100

- 55 to +125

0.60

1N5819

UNIT

V/μs

°C/W

°C

Document Number: D1307014

Version: G15

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