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BPS9G2934X-400Z

Description
BPS9G2934X-400/SOT502/TRAY
Categorysemiconductor    Discrete semiconductor   
File Size781KB,10 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
Environmental Compliance
Download Datasheet Parametric View All

BPS9G2934X-400Z Overview

BPS9G2934X-400/SOT502/TRAY

BPS9G2934X-400Z Parametric

Parameter NameAttribute value
Transistor typeLDMOS
frequency2.9GHz ~ 3.4GHz
Gain12dB
Voltage - Test32V
Rated current-
Noise Figure-
Current - Test400mA
Power - output400W
Voltage - Rated65V
Package/casingmodule
Supplier device packagingmodule
BPS9G2934X-400
LDMOS S-band radar power module
Rev. 1 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
400 W GEN9 LDMOS power module intended for S-band radar applications in the
frequency range from 2.9 GHz to 3.4 GHz.
Table 1.
Test information
Typical RF performance at T
amb
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 400 mA; P
L
= 400 W; in a
class-AB test circuit.
Test signal
pulsed RF
f
(MHz)
2900 to 3400
V
DS
(V)
32
P
L
(W)
400
G
p
(dB)
12
D
(%)
43
1.2 Features and benefits
400 W pulsed RF power designed for S-band (2.9 GHz to 3.4 GHz)
Small size: 5.5
3.5 cm
Low weight: 85 g
Excellent ruggedness, VSWR 10 : 1
1
10
6
h MTTF
Input/output 50
matched
High efficiency
Excellent thermal stability (silver plated base plate)
High flexibility with respect to pulse formats
100 % RF testing in production
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 2.9 GHz to 3.4 GHz
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