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2SA1163-GR,LF

Description
TRANS PNP 120V 0.1A SMINI
Categorysemiconductor    Discrete semiconductor   
File Size309KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SA1163-GR,LF Overview

TRANS PNP 120V 0.1A SMINI

2SA1163-GR,LF Parametric

Parameter NameAttribute value
Transistor typePNP
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)120V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 1mA,10mA
Current - collector cutoff (maximum)100nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)200 @ 2mA,6V
Power - Max150mW
Frequency - Transition100MHz
Operating temperature125°C(TJ)
Installation typesurface mount
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingS-Mini
2SA1163
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1163
Audio Frequency General Purpose Amplifier Applications
High voltage: V
CEO
=
−120
V
Excellent h
FE
linearity: h
FE
(I
C
=
−0.1
mA)/h
FE
(I
C
=
−2
mA)
= 0.95 (typ.)
High h
FE:
h
FE
= 200 to 700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC2713
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−120
−120
−5
−100
−20
150
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
TO-236MOD
JEITA
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1A
temperature, etc.) may cause this product to decrease in the
Weight: 0.012 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
Test Condition
V
CB
= −120
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
Min
200
Typ.
100
4
1.0
Max
−0.1
−0.1
700
−0.3
10
V
MHz
pF
dB
Unit
μA
μA
h
FE
V
CE
= −6
V, I
C
= −2
mA
(Note)
V
CE (sat)
f
T
C
ob
NF
I
C
= −10
mA, I
B
= −1
mA
V
CE
= −6
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
V
CE
= −6
V, I
C
= −0.1
mA, f
=
1 kHz,
Rg
=
10 kΩ,
Note: h
FE
classification GR (G): 200 to 400, BL (L): 350 to 700
( ) marking symbol
Marking
Start of commercial production
1982-12
1
2014-03-01

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Description TRANS PNP 120V 0.1A SMINI Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Fixed Resistor, Thin Film, 0.25W, 218000ohm, 100V, 0.05% +/-Tol, 50ppm/Cel, Surface Mount, 1005, CHIP
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 CHIP
Reach Compliance Code - unknow unknow unknow unknow unknown unknown unknown unknown compliant
Other features - LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE ANTI-SULFUR, FLAME PROOF, NON-INDUCTIVE
Maximum collector current (IC) - 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A -
Collector-emitter maximum voltage - 120 V 120 V 120 V 120 V 120 V 120 V 120 V 120 V -
Configuration - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
Minimum DC current gain (hFE) - 200 200 200 350 350 350 350 200 -
JESD-30 code - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 -
Number of components - 1 1 1 1 1 1 1 1 -
Number of terminals - 3 3 3 3 3 3 3 3 2
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMT
Polarity/channel type - PNP PNP PNP PNP PNP PNP PNP PNP -
surface mount - YES YES YES YES YES YES YES YES YES
Terminal form - GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING -
Terminal location - DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL -
transistor applications - AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER -
Transistor component materials - SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON -
Nominal transition frequency (fT) - 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz -
Base Number Matches - 1 1 1 1 1 1 1 1 -
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