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2SA1163GR(T5RMAT1F

Description
Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size309KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA1163GR(T5RMAT1F Overview

Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon

2SA1163GR(T5RMAT1F Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
2SA1163
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1163
Audio Frequency General Purpose Amplifier Applications
High voltage: V
CEO
=
−120
V
Excellent h
FE
linearity: h
FE
(I
C
=
−0.1
mA)/h
FE
(I
C
=
−2
mA)
= 0.95 (typ.)
High h
FE:
h
FE
= 200 to 700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC2713
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−120
−120
−5
−100
−20
150
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
TO-236MOD
JEITA
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1A
temperature, etc.) may cause this product to decrease in the
Weight: 0.012 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
Test Condition
V
CB
= −120
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
Min
200
Typ.
100
4
1.0
Max
−0.1
−0.1
700
−0.3
10
V
MHz
pF
dB
Unit
μA
μA
h
FE
V
CE
= −6
V, I
C
= −2
mA
(Note)
V
CE (sat)
f
T
C
ob
NF
I
C
= −10
mA, I
B
= −1
mA
V
CE
= −6
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
V
CE
= −6
V, I
C
= −0.1
mA, f
=
1 kHz,
Rg
=
10 kΩ,
Note: h
FE
classification GR (G): 200 to 400, BL (L): 350 to 700
( ) marking symbol
Marking
Start of commercial production
1982-12
1
2014-03-01

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Description Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor TRANS PNP 120V 0.1A SMINI Fixed Resistor, Thin Film, 0.25W, 218000ohm, 100V, 0.05% +/-Tol, 50ppm/Cel, Surface Mount, 1005, CHIP
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - CHIP
Reach Compliance Code unknow unknow unknow unknow unknown unknown unknown unknown - compliant
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE - ANTI-SULFUR, FLAME PROOF, NON-INDUCTIVE
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A - -
Collector-emitter maximum voltage 120 V 120 V 120 V 120 V 120 V 120 V 120 V 120 V - -
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE - -
Minimum DC current gain (hFE) 200 200 200 350 350 350 350 200 - -
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 - -
Number of components 1 1 1 1 1 1 1 1 - -
Number of terminals 3 3 3 3 3 3 3 3 - 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMT
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP PNP - -
surface mount YES YES YES YES YES YES YES YES - YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING - -
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL - -
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER - -
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON - -
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz - -
Base Number Matches 1 1 1 1 1 1 1 1 - -
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