PMEG2002ESF
10 March 2017
20 V, 0.2 A low VF MEGA Schottky barrier rectifier
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra small
Surface-Mounted Device (SMD) package.
2. Features and benefits
•
•
•
•
•
•
Average forward current I
F(AV)
≤ 0.2 A
Reverse voltage V
R
≤ 20 V
Low forward voltage typ. V
F
= 310 mV
Low reverse current typ. I
R
= 0.88 µA
Ultra small and leadless SMD package
Package height typ. 0.3 mm
3. Applications
•
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Low power consumption applications
Ultra high-speed switching
LED backlight for mobile application
4. Quick reference data
Table 1. Quick reference data
Symbol
I
F
V
R
V
F
I
R
Parameter
forward current
reverse voltage
forward voltage
reverse current
Conditions
T
sp
≤ 120 °C
T
j
= 25 °C
I
F
= 200 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
pulsed; T
j
= 25 °C
V
R
= 10 V; T
j
= 25 °C
Min
-
-
-
-
Typ
-
-
435
0.37
Max
0.28
20
490
-
Unit
A
V
mV
µA
Nexperia
PMEG2002ESF
20 V, 0.2 A low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2. Pinning information
Pin
1
2
Symbol Description
K
A
cathode[1]
anode
1
2
sym001
Simplified outline
Graphic symbol
1
2
Transparent
top view
DSN0603-2 (SOD962-2)
[1]
The marking bar indicates the cathode.
6. Ordering information
Table 3. Ordering information
Type number
PMEG2002ESF
Package
Name
DSN0603-2
Description
Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3
mm
Version
SOD962-2
7. Marking
Table 4. Marking codes
Type number
PMEG2002ESF
Marking code
E
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
F(AV)
Parameter
reverse voltage
forward current
average forward current
Conditions
T
j
= 25 °C
T
sp
≤ 120 °C
δ = 0.5 ; f = 20 kHz; T
sp
≤ 125 °C; square
wave
δ = 0.5 ; f = 20 kHz; T
amb
≤ 115 °C;
square wave
I
FRM
I
FSM
P
tot
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
t
p
≤ 1 ms; δ ≤ 0.25
t
p
= 8 ms; T
j(init)
= 25 °C; square wave
T
amb
≤ 25 °C
[2]
[3]
[1]
Min
-
-
-
-
-
-
-
-
Max
20
0.28
0.2
0.2
1
4.5
325
525
Unit
V
A
A
A
A
A
mW
mW
PMEG2002ESF
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 March 2017
2 / 13
Nexperia
PMEG2002ESF
20 V, 0.2 A low VF MEGA Schottky barrier rectifier
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
[1]
Min
-
-
-55
-65
Max
950
125
125
150
Unit
mW
°C
°C
°C
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 1 cm each.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-a)
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1] [2]
[1] [3]
[1] [4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
310
190
105
40
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P
R
are a
significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 1 cm each.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
10
3
aaa-006823
Z
th(j-a)
(K/W)
duty cycle =
1
0.75
0.5
0.25
0.1
10
2
0.33
0.2
0.05
0.02
0
10
10
-3
0.01
10
-2
10
-1
1
10
10
2
10
3
t
p
(s)
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG2002ESF
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 March 2017
3 / 13
Nexperia
PMEG2002ESF
20 V, 0.2 A low VF MEGA Schottky barrier rectifier
10
3
aaa-006824
Z
th(j-a)
(K/W)
duty cycle =
10
2
0.75
0.33
0.2
0.05
1
0.5
0.25
0.1
0.02
0.01
0
10
10
-3
10
-2
10
-1
1
2
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for anode and cathode 1 cm each
Fig. 2.
10
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-006825
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.33
0.2
0.5
0.25
0.1
0.05
0.02
0.01
0
10
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 0.1 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
pulsed; T
j
= 25 °C
I
F
= 1 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
pulsed; T
j
= 25 °C
I
F
= 10 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
pulsed; T
j
= 25 °C
I
F
= 100 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
pulsed; T
j
= 25 °C
Min
-
-
-
-
Typ
185
245
310
390
Max
250
320
380
450
Unit
mV
mV
mV
mV
PMEG2002ESF
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 March 2017
4 / 13
Nexperia
PMEG2002ESF
20 V, 0.2 A low VF MEGA Schottky barrier rectifier
Symbol
Parameter
Conditions
I
F
= 200 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
pulsed; T
j
= 25 °C
Min
-
-
-
-
-
-
-
Typ
435
0.26
0.37
0.88
25
9
1.9
Max
490
1.5
-
3.5
-
-
-
Unit
mV
µA
µA
µA
pF
pF
ns
I
R
reverse current
V
R
= 6 V; T
j
= 25 °C
V
R
= 10 V; T
j
= 25 °C
V
R
= 20 V; T
j
= 25 °C
C
d
t
rr
diode capacitance
reverse recovery time
V
R
= 1 V; f = 1 MHz; T
j
= 25 °C
V
R
= 10 V; f = 1 MHz; T
j
= 25 °C
I
F
= 200 mA; I
R
= 200 mA;
I
R(meas)
= 40 mA; T
j
= 25 °C
aaa-006826
10
I
F
(A)
1
I
R
(A)
10
-3
10
-4
10
-5
10
-6
10
-7
(3)
(1)
(2)
aaa-006827
10
-1
10
-2
(1)
10
-8
10
-9
(2)
(3)
(4)
10
-3
10
-10
10
-11
(4)
10
-4
0
0.2
0.4
0.6
0.8
V
F
(V)
1.0
0
5
10
15
V
R
(V)
20
(1) T
j
= 125 °C
(2) T
j
= 85 °C
(3) T
j
= 25 °C
(4) T
j
= −40 °C
Fig. 4.
Forward current as a function of forward
voltage; typical values
Fig. 5.
(1) T
j
= 125 °C
(2) T
j
= 85 °C
(3) T
j
= 25 °C
(4) T
j
= −40 °C
Reverse current as a function of reverse
voltage; typical values
PMEG2002ESF
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 March 2017
5 / 13
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