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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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© Nexperia B.V. (year). All rights reserved.
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BAT86
25 July 2012
Schottky barrier single diode
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode
is suitable for mounting on a 2 E (5.08 mm) pitch.
1.2 Features and benefits
•
Low forward voltage
•
Guard ring protected
•
Hermetically-sealed leaded glass package
1.3 Applications
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes
1.4 Quick reference data
Table 1.
Symbol
I
F(AV)
V
R
V
F
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
I
F
= 10 mA; T
amb
= 25 °C
Conditions
δ = 0.5 ; f = 20 kHz; T
amb
≤ 50 °C; PCB
mounting, lead length = 4 mm
-
-
-
-
50
450
V
mV
Min
-
Typ
-
Max
200
Unit
mA
2. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K
A
cathode
[1]
anode
[1]
Simplified outline
k
a
Graphic symbol
K
A
aaa-003679
DO-34 (SOD68)
The marking band indicates the cathode.
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NXP Semiconductors
BAT86
Schottky barrier single diode
3. Ordering information
Table 3.
Ordering information
Package
Name
BAT86
DO-34
Description
hermetically sealed glass package; axial leaded; 2 leads
Version
SOD68
Type number
4. Marking
Table 4.
BAT86
Marking codes
Marking code
marking band
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
F(AV)
I
FRM
I
FSM
T
j
T
amb
T
stg
Parameter
reverse voltage
forward current
average forward current
repetitive peak forward current
non-repetitive peak forward
current
junction temperature
ambient temperature
storage temperature
δ = 0.5 ; f = 20 kHz; T
amb
≤ 50 °C; PCB
mounting, lead length = 4 mm
t
p
≤ 1 s; δ ≤ 0.5
t
p
≤ 10 ms; T
j(init)
= 25 °C
-
-
-
-65
-65
500
5
125
125
150
mA
A
°C
°C
°C
Conditions
Min
-
-
-
Max
50
200
200
Unit
V
mA
mA
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
[1]
Conditions
in free air
[1]
Min
-
Typ
-
Max
320
Unit
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BAT86
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
25 July 2012
2/8
NXP Semiconductors
BAT86
Schottky barrier single diode
7. Characteristics
Table 7.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 0.1 mA; T
amb
= 25 °C
I
F
= 1 mA; T
amb
= 25 °C
I
F
= 10 mA; T
amb
= 25 °C
I
F
= 30 mA; T
amb
= 25 °C
I
F
= 100 mA; T
amb
= 25 °C
I
R
C
d
t
rr
reverse current
diode capacitance
reverse recovery time
V
R
= 40 V; T
amb
= 25 °C; pulsed;
t
p
= 300 µs; δ = 0.02
f = 1 MHz; T
amb
= 25 °C; V
R
= 1 V
I
F
= 10 mA; I
R
= 10 mA; R
L
= 100 Ω;
I
R(meas)
= 1 mA; T
amb
= 25 °C
10
3
I
F
(mA)
10
2
10
3
(2)
Min
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
Max
300
380
450
600
900
5
8
4
Unit
mV
mV
mV
mV
mV
µA
pF
ns
mld357
(1) (2) (3)
I
R
(nA)
10
4
10
5
mgc686
(1)
10
10
2
10
1
(3)
1
(1)
(2) (3)
10
- 1
0
0.4
0.8
V
F
(V)
1.2
10
- 1
0
10
20
30
40
V
R
(V)
50
(1) T
amb
= 125 °C
(2) T
amb
= 85 °C
(3) T
amb
= 25 °C
Fig. 1.
Forward current as a function of forward
voltage; typical values
Fig. 2.
(1) T
amb
= 85 °C
(2) T
amb
= 25 °C
(3) T
amb
= −40 °C
Reverse current as a function of reverse
voltage; typical values
BAT86
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
25 July 2012
3/8
NXP Semiconductors
BAT86
Schottky barrier single diode
12
C
d
(pF)
8
mgc687
I
F(AV)
(mA)
250
mra540
200
150
100
4
50
0
0
10
20
30
40
V
R
(V)
50
0
0
50
100
T
amb
(°C)
150
T
amb
= 25 °C; f = 1 MHz
Fig. 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig. 4.
FR4 PCB, standard footprint
Average forward current as a function of
ambient temperature; derating curve
8. Test information
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+ I
F
× R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
mga881
t
p
t
+ I
F
trr
10 %
t
(1)
V
R
90 %
input signal
output signal
(1) I
R
= 1 mA
Fig. 5.
Reverse recovery time test circuit and waveforms
BAT86
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
25 July 2012
4/8
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