TPC817 SERIES
Taiwan Semiconductor
200mW, 4 PIN DIP Phototransistor Photocoupler
FEATURES
● Current transfer ratio
(CTR: MIN.80% at I
F
=5mA, V
CE
=5V)
● High isolation voltage between input and output
(Viso=5000V rms)
● Creepage distance＞7.62mm
● UL Recognized File # E478892
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
CTR
V
CEO
P
tot
I
C
V
iso
Package
Configuration
VALUE
80-600
80
200
50
UNIT
%
V
mW
mA
APPLICATIONS
●
●
●
●
●
Programmable controllers
System appliances, measuring instruments
Telecommunication equipments
Home appliances,such as fan heaters,etc
Signal transmission between circuits of different potentials
and impedances
5000
Vrms
DIP-4
DIP-4M
SOP-4
Single Dice
MECHANICAL DATA
● Case: DIP-4 , DIP-4M , SOP-4
● Molding compound: UL flammability classification
rating 94V-0
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
1
Version:C1612
TPC817 SERIES
Taiwan Semiconductor
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward current
Input
Reverse voltage
Power dissipation
Collector-emitter voltage
Output
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Isolation voltage
Rated impulse isolation voltage
Rated repetitive peak isolation voltage
Operating temperature
Storage temperature
Soldering temperature
SYMBOL
I
F
V
R
P
V
CEO
V
ECO
I
C
P
C
P
tot
V
iso
V
IOTM
V
IORM
T
opr
T
stg
T
sol
PART NUMBER
50
6
70
80
6
50
150
200
5000
6000
630
-40 to +100
-55 to +125
260
UNIT
mA
V
mW
V
V
mA
mW
mW
Vrms
V
V
°C
°C
°C
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage
Input
Reverse current
Terminal capacitance
Collector dark current
Collector-emitter
Output
breakdown voltage
Emitter-collector
breakdown voltage
Collector current
Current transfer
ration(Note 1)
Collector-emitter
saturation voltage
Transfer
Characteristics
Floating capacitance
Cut-off frequency
Response
time
Rise time
Fall time
Isolation resistance
I
F
=20mA, I
C
=1mA
DC500V,
40 to 60%RH
V=0, f=1MHz
V
CE
=5V, I
C
=2mA,
R
L
=100Ω, -3dB
V
CE
=2V, I
C
=2mA,
R
L
=100Ω
I
F
=5mA, V
CE
=5V
CONDITIONS
I
F
=20mA
V
R
=4V
V=0, f=1kHz
V
CE
=20V,I
F
=0
I
C
=0.1mA, I
F
=0
I
E
=10μA, I
F
=0
SYMBOL
V
F
I
R
C
t
I
CEO
BV
CEO
BV
ECO
IC
CTR
V
CE(sat)
R
ISO
C
f
f
c
t
r
t
f
5x10
10
MIN
TYP
1.2
MAX
1.4
10
UNIT
V
μA
pF
A
V
V
30
250
10
-7
80
6
2.5
80
0.1
10
11
30
600
0.2
mA
%
V
Ω
0.6
80
4
3
1.0
pF
KHz
18
18
μs
μs
Notes:
1. Classification table of current transfer ratio is shown below
2
Version:C1612
TPC817 SERIES
Taiwan Semiconductor
RANK TABLE OF CURRENT TRANSFER RATIO, CTR
RANK MARK
A
B
C
D
MIN (%)
80
130
200
300
MAX (%)
160
260
400
600
ORDERING INFORMATION
PART NO.
(Note 1&2)
TPC817x
TPC817Mx
TPC817S1x
PACKING
CODE
C9
C9
RA
G
PACKING CODE
SUFFIX
PACKAGE
DIP-4
DIP-4M
(Leads with 0.4" spacing)
SOP-4
PACKING
100 / TUBE
100 / TUBE
2K / 13" Reel
Notes:
1. “x” defines CTR rank from “A” to “D”
2. Whole series with green compound
EXAMPLE
EXAMPLE P/N
TPC817A C9G
PART NO.
TPC817A
PACKING CODE
C9
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
3
Version:C1612
TPC817 SERIES
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig. 1 Forward Current vs.
Ambient Temperature
60
I
F
, Instantaneous Forward Current (mA)
50
40
30
20
10
0
-30 -15
0
15
30
45
60
75
90 105 120 135
Collector Power Dissipation, Pc (mW)
200
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
150
100
50
0
-30 -15
0
15
30
45
60
75
90 105 120 135
Ambient Temperature, Ta (°C)
Ambient Temperature, Ta (°C)
Fig.3 Collector-Emitter Saturation Voltage vs
Forward Current
6
Collector-Emitter Saturation Voltage V
CE
(sat)
5
Forward Current I
F
(mA)
4
3
2
1
0
0
5
10
15
Forward Current I
F
(mA)
7mA
5mA
3mA
1mA
I
C
=0.5mA
1
0
100
1000
Fig.4 Forward Current vs.
Forward Voltage
75°C
50°C
25°C
0°C
10
-25°C
0.5
1
1.5
2
2.5
3
Forward Voltage V
F
(V)
4
Version:C1612
TPC817 SERIES
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig. 5 Current Transfer Ratio vs.
Forward Current
200
180
Current Transfer Ratio (%)
Collector Current Ic(mA)
160
140
120
100
80
60
40
20
0
1
10
Forward Current I
F
(mA)
100
0
0
1
2
3
4
5
6
7
8
9
Collector-Emitter Voltage V
CE
(V)
V
CE
=5V
30
I
F
=30mA
Pc(max)
20
20mA
Fig.6 Collector Current vs.
Collector-Emitter Voltage
10
10mA
5mA
Fig.7 Relative Current Transfer Ratio vs.
Ambient Temperature
150
Relative Current Transfer Ratio (%)
Fig.8 Collector-emitter Saturation Voltage vs
Ambient Temperature
0.16
0.14
Collector-Emitter Saturation
Voltage VCE(sat) (A)
0.12
0.1
0.08
0.06
0.04
0.02
I
F
=20mA
I
C
=1mA
I
F
=5mA
V
CE
=5V
100
50
0
-30
0
30
60
90
120
0
-30
0
30
60
90
120
Ambient Temperature Ta(°C)
Ambient Temperature Ta(°C)
5
Version:C1612
京公网安备 11010802033920号
EEWORLD
