Composite Transistors
XN2211
Silicon NPN epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.8
-0.3
0.65±0.15
+0.2
+0.25
1.5
-0.05
5
0.65±0.15
1
0.95
2.9
-0.05
q
q
Two elements incorporated into one package.
(Base-coupled transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
4
0.95
3
2
0.3
-0.05
0.4±0.2
0.16
-0.06
+0.1
1.1
-0.1
q
UN1211
×
2 elements
0.8
s
Basic Part Number of Element
+0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating
Collector to emitter voltage
of
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Emitter (Tr2)
0 to 0.1
0.1 to 0.3
4 : Base
5 : Emitter (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol:
9O
Internal Connection
5
4
3
2
Tr1
1
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
*1
(Ta=25˚C)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
V
OH
V
OL
f
T
R
1
R
1
/R
2
Conditions
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 10V, I
C
= 5mA
V
CE
= 10V, I
C
= 5mA
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 2.5V, R
L
= 1kΩ
V
CB
= 10V, I
E
= –2mA, f = 200MHz
–30%
0.8
150
10
1.0
+30%
1.2
4.9
0.2
35
0.5
0.99
0.25
V
V
V
MHz
kΩ
min
50
50
0.1
0.5
0.5
typ
max
Unit
V
V
µA
µA
mA
Ratio between 2 elements
+0.1
1.45±0.1
s
Features
1
Composite Transistors
P
T
— Ta
500
XN2211
Total power dissipation P
T
(mW)
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
I
C
— V
CE
160
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=10
400
h
FE
— I
C
V
CE
=10V
30
10
3
1
0.3
0.1
–25˚C
0.03
0.01
0.1
120
100
80
60
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
Forward current transfer ratio h
FE
140
I
B
=1.0mA
0.9mA
0.8mA
Collector current I
C
(mA)
300
Ta=75˚C
200
25˚C
100
–25˚C
0.2mA
40
20
0
0
2
4
6
8
10
12
25˚C
Ta=75˚C
0.1mA
0
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
100
30
V
IN
— I
O
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
300
100
30
10
3
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
1000
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
2
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