Composite Transistors
XN01119
(XN1119)
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
3
4
5
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
s
Features
q
q
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
2
0.30
+0.10
–0.05
1
(0.65)
1.1
+0.2
–0.1
q
UNR1119(UN1119)
×
2 elements
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating
Collector to emitter voltage
of
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–50
–50
–100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini5-G1 Pakage
Marking Symbol:
7P
Internal Connection
5
4
3
2
Tr1
1
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
*1
(Ta=25˚C)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
V
OH
V
OL
f
T
R
1
R
1
/R
2
Conditions
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
V
EB
= –6V, I
C
= 0
V
CE
= –10V, I
C
= –5mA
V
CE
= –10V, I
C
= –5mA
I
C
= –10mA, I
B
= – 0.3mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –2.5V, R
L
= 1kΩ
V
CB
= –10V, I
E
= 1mA, f = 200MHz
–30%
0.08
80
1
0.1
+30%
0.12
–4.9
– 0.2
30
0.5
0.99
– 0.25
V
V
V
MHz
kΩ
min
–50
–50
– 0.1
– 0.5
– 1.5
typ
max
Unit
V
V
µA
µA
mA
Ratio between 2 elements
Note) The Part number in the Parenthesis shows conventional part number.
0 to 0.1
1.1
+0.3
–0.1
s
Basic Part Number of Element
10˚
0.4
±0.2
5˚
1
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•
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