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2N6517 — NPN Epitaxial Silicon Transistor
August 2010
2N6517
NPN Epitaxial Silicon Transistor
Features
•
•
•
•
High Voltage Transistor
Collector Dissipation: P
C
(max) = 625mW
Complement to 2N6520
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
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