AS6C4016A-55BIN datasheet, PDF

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AS6C4016A-55BIN: DescriptionIC SRAM 4M PARALLEL 48TFBGA; Categorystorage; File Size2MB，12 Pages; ManufacturerAlliance Memory; Environmental Compliance

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AS6C4016A-55BIN Overview

IC SRAM 4M PARALLEL 48TFBGA

AS6C4016A-55BIN Parametric

Parameter Name	Attribute value
memory type	Volatile
memory format	SRAM
technology	SRAM - Asynchronous
storage	4Mb （256K x 16）
Write cycle time - words, pages	55ns
interview time	55ns
memory interface	in parallel
Voltage - Power	2.7 V ~ 3.6 V
Operating temperature	-40°C ~ 85°C（TA）
Installation type	surface mount
Package/casing	48-LFBGA
Supplier device packaging	48-TFBGA（6x8）

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January 2011

256K X 16 BIT LOW POWER CMOS SRAM

FEATURES

Process Technology : 0.18μm Full CMOS

Organization : 256K x 16 bit

Power Supply Voltage : 2.7V ~ 3.6V

Low Data Retention Voltage : 1.5V(Min.)

Three state output and TTL Compatible

Package Type : VFBGA-48, 44-TSOP2

AS6C4016A

GENERAL DESCRIPTION

The AS6C4016A families are fabricated by Alliance Memory

advanced full CMOS process technology. The families support

industrial temperature range and Chip Scale Package for user

flexibility of system design. The families also support low data

retention voltage for battery back-up operation with low data

retention current.

PRODUCT FAMILY

Product Family

Operating

Temperature

Industrial

(-40 ~ 85°C)

Vcc Range

Speed

Power Dissipation

Standby

Operating

(

SB1

, Typ.)

(

SB1

.Max.)

0.25

μA

PKG Type

KGD

VFBGA-48

44-TSOP2

AS6C4016A

2.7 ~ 3.6V

45 ns

3 mA

Typical values are measured at Vcc=3.3V, TA=25°C and not 100% tested.

Alliance Memory Inc.

Page 1 of 12

AS6C4016A-55BIN Related Products

	AS6C4016A-55BIN	AS6C4016A-45ZIN	AS6C4016A-55ZIN	AS6C4016A-55ZINTR	AS6C4016A-55BINTR	AS6C4016A-45BIN	AS6C4016A-45ZINTR
Description	IC SRAM 4M PARALLEL 48TFBGA	SRAM 4M, 3V, 45ns 256Kx16 LP Asyn SRAM	SRAM 4M, 2.7-5.5V, 55ns 256K x 16 Asyn SRAM	SRAM 4M, 2.7-5.5V, 55ns 256K x 16 Asyn SRAM	SRAM 4M, 2.7-5.5V, 55ns 256K x 16 Asyn SRAM	SRAM 4M, 3V, 45ns 256Kx16 LP Asyn SRAM	SRAM 4M, 3V, 45ns 256Kx16 LP Asyn SRAM
Product Attribute	-	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value
Manufacturer	-	Alliance Memory	Alliance Memory	Alliance Memory	Alliance Memory	Alliance Memory	Alliance Memory
Product Category	-	SRAM	SRAM	SRAM	SRAM	SRAM	SRAM
RoHS	-	Details	Details	Details	Details	Details	Details
Memory Size	-	4 Mbit	4 Mbit	4 Mbit	4 Mbit	4 Mbit	4 Mbit
Organization	-	256 k x 16	256 k x 16	256 k x 16	256 k x 16	256 k x 16	256 k x 16
Access Time	-	45 ns	55 ns	55 ns	55 ns	45 ns	45 ns
Interface Type	-	Parallel	Parallel	Parallel	Parallel	Parallel	Parallel
Supply Voltage - Max	-	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Supply Voltage - Min	-	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Supply Current - Max	-	30 mA	30 mA	30 mA	30 mA	30 mA	30 mA
Minimum Operating Temperature	-	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C
Maximum Operating Temperature	-	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C
Mounting Style	-	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	-	TSOP II-44	TSOP II-44	TSOP II-44	TSOP-44	VFBGA-48	TSOP II-44
Packaging	-	Tray	Tray	Reel	Reel	Tray	Reel
Memory Type	-	SDR	SDR	SDR	SDR	SDR	SDR
Type	-	Asynchronous	Asynchronous	Asynchronous	Asynchronous	Asynchronous	Asynchronous
Moisture Sensitive	-	Yes	Yes	Yes	Yes	Yes	Yes
Factory Pack Quantity	-	135	135	1000	2000	480	1000

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