AS6C4016A-55BINTR datasheet, PDF

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AS6C4016A-55BINTR: DescriptionSRAM 4M, 2.7-5.5V, 55ns 256K x 16 Asyn SRAM; Categorystorage; File Size2MB，12 Pages; ManufacturerAlliance Memory; Environmental Compliance

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AS6C4016A-55BINTR Overview

SRAM 4M, 2.7-5.5V, 55ns 256K x 16 Asyn SRAM

AS6C4016A-55BINTR Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Alliance Memory
Product Category	SRAM
RoHS	Details
Memory Size	4 Mbit
Organization	256 k x 16
Access Time	55 ns
Interface Type	Parallel
Supply Voltage - Max	3.6 V
Supply Voltage - Min	2.7 V
Supply Current - Max	30 mA
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Mounting Style	SMD/SMT
Package / Case	TSOP-44
Packaging	Reel
Memory Type	SDR
Type	Asynchronous
Moisture Sensitive	Yes
Factory Pack Quantity	2000

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January 2011

256K X 16 BIT LOW POWER CMOS SRAM

FEATURES

Process Technology : 0.18μm Full CMOS

Organization : 256K x 16 bit

Power Supply Voltage : 2.7V ~ 3.6V

Low Data Retention Voltage : 1.5V(Min.)

Three state output and TTL Compatible

Package Type : VFBGA-48, 44-TSOP2

AS6C4016A

GENERAL DESCRIPTION

The AS6C4016A families are fabricated by Alliance Memory

advanced full CMOS process technology. The families support

industrial temperature range and Chip Scale Package for user

flexibility of system design. The families also support low data

retention voltage for battery back-up operation with low data

retention current.

PRODUCT FAMILY

Product Family

Operating

Temperature

Industrial

(-40 ~ 85°C)

Vcc Range

Speed

Power Dissipation

Standby

Operating

(

I

SB1

, Typ.)

(

I

SB1

.Max.)

0.25

μA

2)

PKG Type

KGD

VFBGA-48

44-TSOP2

AS6C4016A

2.

2.7 ~ 3.6V

45 ns

3 mA

Typical values are measured at Vcc=3.3V, TA=25°C and not 100% tested.

Alliance Memory Inc.

Page 1 of 12

AS6C4016A-55BINTR Related Products

	AS6C4016A-55BINTR	AS6C4016A-45ZIN	AS6C4016A-55ZIN	AS6C4016A-55ZINTR	AS6C4016A-45BIN	AS6C4016A-45ZINTR	AS6C4016A-55BIN
Description	SRAM 4M, 2.7-5.5V, 55ns 256K x 16 Asyn SRAM	SRAM 4M, 3V, 45ns 256Kx16 LP Asyn SRAM	SRAM 4M, 2.7-5.5V, 55ns 256K x 16 Asyn SRAM	SRAM 4M, 2.7-5.5V, 55ns 256K x 16 Asyn SRAM	SRAM 4M, 3V, 45ns 256Kx16 LP Asyn SRAM	SRAM 4M, 3V, 45ns 256Kx16 LP Asyn SRAM	IC SRAM 4M PARALLEL 48TFBGA
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	-
Manufacturer	Alliance Memory	Alliance Memory	Alliance Memory	Alliance Memory	Alliance Memory	Alliance Memory	-
Product Category	SRAM	SRAM	SRAM	SRAM	SRAM	SRAM	-
RoHS	Details	Details	Details	Details	Details	Details	-
Memory Size	4 Mbit	4 Mbit	4 Mbit	4 Mbit	4 Mbit	4 Mbit	-
Organization	256 k x 16	256 k x 16	256 k x 16	256 k x 16	256 k x 16	256 k x 16	-
Access Time	55 ns	45 ns	55 ns	55 ns	45 ns	45 ns	-
Interface Type	Parallel	Parallel	Parallel	Parallel	Parallel	Parallel	-
Supply Voltage - Max	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	-
Supply Voltage - Min	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	-
Supply Current - Max	30 mA	30 mA	30 mA	30 mA	30 mA	30 mA	-
Minimum Operating Temperature	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	-
Maximum Operating Temperature	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	-
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	-
Package / Case	TSOP-44	TSOP II-44	TSOP II-44	TSOP II-44	VFBGA-48	TSOP II-44	-
Packaging	Reel	Tray	Tray	Reel	Tray	Reel	-
Memory Type	SDR	SDR	SDR	SDR	SDR	SDR	-
Type	Asynchronous	Asynchronous	Asynchronous	Asynchronous	Asynchronous	Asynchronous	-
Moisture Sensitive	Yes	Yes	Yes	Yes	Yes	Yes	-
Factory Pack Quantity	2000	135	135	1000	480	1000	-

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