TZ240N30KOFHPSA1 datasheet, PDF

Datasheet> All Categories > Analog mixed-signal IC> Trigger device> TZ240N30KOFHPSA1

TZ240N30KOFHPSA1: DescriptionSCR MODULE 3KV 700A MODULE; CategoryAnalog mixed-signal IC Trigger device; File Size407KB，13 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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TZ240N30KOFHPSA1 Overview

SCR MODULE 3KV 700A MODULE

TZ240N30KOFHPSA1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-XXFM-X4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Configuration	SINGLE
Maximum DC gate trigger current	250 mA
JESD-30 code	R-XXFM-X4
Number of components	1
Number of terminals	4
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum rms on-state current	700 A
Guideline	IEC-747-6
Off-state repetitive peak voltage	3000 V
Repeated peak reverse voltage	3000 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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Netz-Thyristor-Modul

Phase Control Thyristor Module

Datenblatt / Data sheet

TZ240N

Kenndaten

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T

= -40°C... T

vj max

repetitive peak forward off-state and reverse voltages

Vorwärts-Stoßspitzensperrspannung

non-repetitive peak forward off-state voltage

Rückwärts-Stoßspitzensperrspannung

non-repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

= 85°C

= 19°C

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

DIN IEC 747-6

f = 50 Hz, i

= 1 A, di

/dt = 1 A/µs

= T

vj max

, v

= 0,67 V

DRM

6.Kennbuchstabe / 6 letter C

6.Kennbuchstabe / 6 letter F

= -40°C... T

vj max

= +25°C... T

vj max

Elektrische Eigenschaften

DRM

RRM

2800

3200

3600

2800

DSM

3200

3600

2900

RSM

3300

3700

TRMSM

TAVM

TSM

I²t

(di

/dt)

(dv

/dt)

3000 V

3400 V

3000 V

3400 V

3100 V

3500 V

700 A

240 A

446 A

6.100 A

5.500 A

186.000 A²s

151.000 A²s

100 A/µs

500 V/µs

1000 V/µs

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

Zündverzug

gate controlled delay time

= T

vj max

, i

= 1200 A

= T

vj max

= T

vj max

= 25°C, v

= 6 V

= 25°C, v

= 6 V

= T

vj max

, v

= 6 V

= T

vj max

, v

= 0,5 V

DRM

= T

vj max

, v

= 0,5 V

DRM

= 25°C, v

= 6 V, R

= 5

Ω

(TO)

max.

3,43 V

1,17 V

1,7 mΩ

max.

250 mA

1,5 V

10 mA

5 mA

0,2 V

300 mA

1500 mA

250 mA

4,5 µs

= 25°C, v

= 6 V, R

≥

Ω

= 1 A, di

/dt = 1 A/µs, t

= 20 µs

= T

vj max

= V

DRM

, v

= V

RRM

DIN IEC 747-6

= 25 °C,i

= 1 A, di

/dt = 1 A/µs

, i

prepared by: C.Drilling

approved by: M. Leifeld

date of publication:

revision:

11.03.04

BIP AC / 2004.03.11; C. Drilling

A 05/04

Seite/page

1/12

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Description	SCR MODULE 3KV 700A MODULE	SCR MODULE 3.6KV 700A MODULE	SCR MODULE 3.4KV 700A MODULE	Silicon Controlled Rectifier, 700A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element, MODDULE-4	Silicon Controlled Rectifier, 445000mA I(T), 3400V V(RRM)	Silicon Controlled Rectifier, 445000mA I(T), 3000V V(RRM)	Silicon Controlled Rectifier, 445000mA I(T), 2800V V(RRM)	Silicon Controlled Rectifier, 445000mA I(T), 3200V V(RRM)	Silicon Controlled Rectifier, 445000mA I(T), 3600V V(RRM)
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Maximum DC gate trigger current	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA
Repeated peak reverse voltage	3000 V	3600 V	3400 V	3600 V	3400 V	3000 V	2800 V	3200 V	3600 V
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Base Number Matches	1	1	1	1	1	1	1	1	1
ECCN code	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum operating temperature	125 °C	-	125 °C	-	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-	-40 °C	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Maximum DC gate trigger voltage	-	-	-	-	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
Quick connection description	-	-	-	-	G-GR	G-GR	G-GR	G-GR	G-GR
Description of screw terminals	-	-	-	-	A-K	A-K	A-K	A-K	A-K
Maximum holding current	-	-	-	-	300 mA	300 mA	300 mA	300 mA	300 mA
Maximum leakage current	-	-	-	-	250 mA	250 mA	250 mA	250 mA	250 mA
On-state non-repetitive peak current	-	-	-	-	6100 A	6100 A	6100 A	6100 A	6100 A
Maximum on-state current	-	-	-	-	445000 A	445000 A	445000 A	445000 A	445000 A

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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