TZ240N32KOC datasheet, PDF - EEWORLD Datasheet

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TZ240N32KOC: DescriptionSilicon Controlled Rectifier, 445000mA I(T), 3200V V(RRM); CategoryAnalog mixed-signal IC Trigger device; File Size407KB，13 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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TZ240N32KOC Overview

Silicon Controlled Rectifier, 445000mA I(T), 3200V V(RRM)

TZ240N32KOC Parametric

Parameter Name	Attribute value
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum DC gate trigger current	250 mA
Maximum DC gate trigger voltage	1.5 V
Quick connection description	G-GR
Description of screw terminals	A-K
Maximum holding current	300 mA
Maximum leakage current	250 mA
On-state non-repetitive peak current	6100 A
Maximum on-state current	445000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Repeated peak reverse voltage	3200 V
Trigger device type	SCR
Base Number Matches	1

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Netz-Thyristor-Modul

Phase Control Thyristor Module

Datenblatt / Data sheet

TZ240N

Kenndaten

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T

= -40°C... T

vj max

repetitive peak forward off-state and reverse voltages

Vorwärts-Stoßspitzensperrspannung

non-repetitive peak forward off-state voltage

Rückwärts-Stoßspitzensperrspannung

non-repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

= 85°C

= 19°C

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

DIN IEC 747-6

f = 50 Hz, i

= 1 A, di

/dt = 1 A/µs

= T

vj max

, v

= 0,67 V

DRM

6.Kennbuchstabe / 6 letter C

6.Kennbuchstabe / 6 letter F

= -40°C... T

vj max

= +25°C... T

vj max

Elektrische Eigenschaften

DRM

RRM

2800

3200

3600

2800

DSM

3200

3600

2900

RSM

3300

3700

TRMSM

TAVM

TSM

I²t

(di

/dt)

(dv

/dt)

3000 V

3400 V

3000 V

3400 V

3100 V

3500 V

700 A

240 A

446 A

6.100 A

5.500 A

186.000 A²s

151.000 A²s

100 A/µs

500 V/µs

1000 V/µs

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

Zündverzug

gate controlled delay time

= T

vj max

, i

= 1200 A

= T

vj max

= T

vj max

= 25°C, v

= 6 V

= 25°C, v

= 6 V

= T

vj max

, v

= 6 V

= T

vj max

, v

= 0,5 V

DRM

= T

vj max

, v

= 0,5 V

DRM

= 25°C, v

= 6 V, R

= 5

Ω

(TO)

max.

3,43 V

1,17 V

1,7 mΩ

max.

250 mA

1,5 V

10 mA

5 mA

0,2 V

300 mA

1500 mA

250 mA

4,5 µs

= 25°C, v

= 6 V, R

≥

Ω

= 1 A, di

/dt = 1 A/µs, t

= 20 µs

= T

vj max

= V

DRM

, v

= V

RRM

DIN IEC 747-6

= 25 °C,i

= 1 A, di

/dt = 1 A/µs

, i

prepared by: C.Drilling

approved by: M. Leifeld

date of publication:

revision:

11.03.04

BIP AC / 2004.03.11; C. Drilling

A 05/04

Seite/page

1/12

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Description	Silicon Controlled Rectifier, 445000mA I(T), 3200V V(RRM)	SCR MODULE 3.6KV 700A MODULE	SCR MODULE 3KV 700A MODULE	SCR MODULE 3.4KV 700A MODULE	Silicon Controlled Rectifier, 700A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element, MODDULE-4	Silicon Controlled Rectifier, 445000mA I(T), 3400V V(RRM)	Silicon Controlled Rectifier, 445000mA I(T), 3000V V(RRM)	Silicon Controlled Rectifier, 445000mA I(T), 2800V V(RRM)	Silicon Controlled Rectifier, 445000mA I(T), 3600V V(RRM)
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Maximum DC gate trigger current	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA
Repeated peak reverse voltage	3200 V	3600 V	3000 V	3400 V	3600 V	3400 V	3000 V	2800 V	3600 V
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Base Number Matches	1	1	1	1	1	1	1	1	1
ECCN code	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99
Maximum DC gate trigger voltage	1.5 V	-	-	-	-	1.5 V	1.5 V	1.5 V	1.5 V
Quick connection description	G-GR	-	-	-	-	G-GR	G-GR	G-GR	G-GR
Description of screw terminals	A-K	-	-	-	-	A-K	A-K	A-K	A-K
Maximum holding current	300 mA	-	-	-	-	300 mA	300 mA	300 mA	300 mA
Maximum leakage current	250 mA	-	-	-	-	250 mA	250 mA	250 mA	250 mA
On-state non-repetitive peak current	6100 A	-	-	-	-	6100 A	6100 A	6100 A	6100 A
Maximum on-state current	445000 A	-	-	-	-	445000 A	445000 A	445000 A	445000 A
Maximum operating temperature	125 °C	-	125 °C	125 °C	-	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-	-40 °C	-40 °C	-	-40 °C	-40 °C	-40 °C	-40 °C

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