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TZ240N34KOFHPSA1

Description
SCR MODULE 3.4KV 700A MODULE
CategoryAnalog mixed-signal IC    Trigger device   
File Size407KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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TZ240N34KOFHPSA1 Overview

SCR MODULE 3.4KV 700A MODULE

TZ240N34KOFHPSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-XXFM-X4
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time16 weeks
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationSINGLE
Maximum DC gate trigger current250 mA
JESD-30 codeR-XXFM-X4
Number of components1
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum rms on-state current700 A
GuidelineIEC-747-6
Off-state repetitive peak voltage3400 V
Repeated peak reverse voltage3400 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Datenblatt / Data sheet
TZ240N
TZ240N
Kenndaten
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85°C
T
C
= 19°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
th
6.Kennbuchstabe / 6 letter C
th
6.Kennbuchstabe / 6 letter F
T
vj
= -40°C... T
vj max
T
vj
= +25°C... T
vj max
Elektrische Eigenschaften
V
DRM
,V
RRM
2800
3200
3600
2800
V
DSM
3200
3600
2900
V
RSM
3300
3700
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
3000 V
3400 V
V
3000 V
3400 V
V
3100 V
3500 V
V
700 A
240 A
446 A
6.100 A
5.500 A
186.000 A²s
151.000 A²s
100 A/µs
500 V/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
T
vj
= T
vj max
, i
T
= 1200 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25°C, v
D
= 6 V
T
vj
= 25°C, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
max.
3,43 V
1,17 V
1,7 mΩ
max.
max.
max.
max.
max.
max.
max.
max.
max.
250 mA
1,5 V
10 mA
5 mA
0,2 V
300 mA
1500 mA
250 mA
4,5 µs
T
vj
= 25°C, v
D
= 6 V, R
GK
10
I
L
i
GM
= 1 A, di
G
/dt = 1 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25 °C,i
GM
= 1 A, di
G
/dt = 1 A/µs
i
D
, i
R
t
gd
prepared by: C.Drilling
approved by: M. Leifeld
date of publication:
revision:
11.03.04
2
BIP AC / 2004.03.11; C. Drilling
A 05/04
Seite/page
1/12

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Description SCR MODULE 3.4KV 700A MODULE SCR MODULE 3.6KV 700A MODULE SCR MODULE 3KV 700A MODULE Silicon Controlled Rectifier, 700A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element, MODDULE-4 Silicon Controlled Rectifier, 445000mA I(T), 3400V V(RRM) Silicon Controlled Rectifier, 445000mA I(T), 3000V V(RRM) Silicon Controlled Rectifier, 445000mA I(T), 2800V V(RRM) Silicon Controlled Rectifier, 445000mA I(T), 3200V V(RRM) Silicon Controlled Rectifier, 445000mA I(T), 3600V V(RRM)
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
Maximum DC gate trigger current 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA
Repeated peak reverse voltage 3400 V 3600 V 3000 V 3600 V 3400 V 3000 V 2800 V 3200 V 3600 V
Trigger device type SCR SCR SCR SCR SCR SCR SCR SCR SCR
Base Number Matches 1 1 1 1 1 1 1 1 1
ECCN code EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99
Maximum operating temperature 125 °C - 125 °C - 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C - -40 °C - -40 °C -40 °C -40 °C -40 °C -40 °C
Maximum DC gate trigger voltage - - - - 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
Quick connection description - - - - G-GR G-GR G-GR G-GR G-GR
Description of screw terminals - - - - A-K A-K A-K A-K A-K
Maximum holding current - - - - 300 mA 300 mA 300 mA 300 mA 300 mA
Maximum leakage current - - - - 250 mA 250 mA 250 mA 250 mA 250 mA
On-state non-repetitive peak current - - - - 6100 A 6100 A 6100 A 6100 A 6100 A
Maximum on-state current - - - - 445000 A 445000 A 445000 A 445000 A 445000 A
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