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PN3642

Description
TRANS NPN 45V 0.5A TO-92
CategoryDiscrete semiconductor    The transistor   
File Size25KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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PN3642 Overview

TRANS NPN 45V 0.5A TO-92

PN3642 Parametric

Parameter NameAttribute value
MakerON Semiconductor
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknown
Factory Lead Time1 week
Maximum collector current (IC)0.5 A
Collector-based maximum capacity8 pF
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.6 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
PN3642
PN3642
NPN General Purpose Amplifier
• This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings*
T
A
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
45
60
5.0
500
- 55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= 10mA, I
B
= 0
I
C
= 10µA, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 50V, I
E
= 0
V
CB
= 50V, I
E
= 0, T
A
= 65°C
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 500mA
I
C
= 150mA, I
B
= 15mA
V
CB
= 10V, f = 140KHz
I
C
= 50mA, V
CE
= 5.0V, f = 100MHz
V
CE
= 15V, I
C
= 0, R
G
= 140Ω
f = 30MHz, R
L
= 260Ω
V
CE
= 15V, I
C
= 0, R
G
= 140Ω
f = 30MHz, R
L
= 260Ω
1.5
10
60
dB
%
40
15
Min.
45
60
5.0
50
1.0
120
0.22
8.0
V
pF
Max.
Units
V
V
V
nA
µA
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage *
V
(BR)CBO
V
(BR)EBO
I
CES
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
On Characteristics
h
FE
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
Small Signal Characteristics
C
ob
Output Capacitance
h
fe
G
pe
η
Small Signal Current Gain
Amplifier Power Gain
Collector Efficientcy
* Pulse Test: Pulse Width
300ms, Duty Cycle
2.0%
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002

PN3642 Related Products

PN3642
Description TRANS NPN 45V 0.5A TO-92
Maker ON Semiconductor
package instruction CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknown
Factory Lead Time 1 week
Maximum collector current (IC) 0.5 A
Collector-based maximum capacity 8 pF
Collector-emitter maximum voltage 45 V
Configuration SINGLE
Minimum DC current gain (hFE) 40
JEDEC-95 code TO-92
JESD-30 code O-PBCY-W3
Number of components 1
Number of terminals 3
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape ROUND
Package form CYLINDRICAL
Polarity/channel type NPN
Maximum power dissipation(Abs) 0.6 W
Certification status Not Qualified
surface mount NO
Terminal form WIRE
Terminal location BOTTOM
Transistor component materials SILICON
Nominal transition frequency (fT) 250 MHz
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