F4100R12KS4BOSA1 datasheet, PDF

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F4100R12KS4BOSA1: DescriptionIGBT MODULE VCES 1200V 100A; CategoryDiscrete semiconductor The transistor; File Size481KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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F4100R12KS4BOSA1 Overview

IGBT MODULE VCES 1200V 100A

F4100R12KS4BOSA1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-XUFM-X26
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	50 weeks 1 day
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Maximum collector current (IC)	130 A
Collector-emitter maximum voltage	1200 V
Configuration	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 code	R-XUFM-X26
Number of components	4
Number of terminals	26
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	390 ns
Nominal on time (ton)	190 ns
Base Number Matches	1

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TechnischeInformation/TechnicalInformation

IGBT-Module

IGBT-modules

F4-100R12KS4

VorläufigeDaten

PreliminaryData

CES

1200

100

130

200

660

+/-20

min.

= 25°C

= 125°C

CE sat

GEth

Gint

ies

res

CES

GES

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

d on

4,5

typ.

3,20

3,85

5,5

1,10

5,0

6,80

0,42

0,12

0,13

0,05

0,06

0,31

0,36

0,02

0,03

max.

3,75

6,5

5,0

400

µC

Ω

µs

IGBT,Wechselrichter/IGBT,Inverter

HöchstzulässigeWerte/MaximumRatedValues

Kollektor-Emitter-Sperrspannung

Collector-emittervoltage

Kollektor-Dauergleichstrom

ContinuousDCcollectorcurrent

PeriodischerKollektor-Spitzenstrom

Repetitivepeakcollectorcurrent

Gesamt-Verlustleistung

Totalpowerdissipation

Gate-Emitter-Spitzenspannung

Gate-emitterpeakvoltage

= 25°C

= 65°C, T

vj max

= 150°C

= 25°C, T

vj max

= 150°C

= 1 ms

= 25°C, T

vj max

= 150

C nom

CRM

tot

GES

CharakteristischeWerte/CharacteristicValues

Kollektor-Emitter-Sättigungsspannung

Collector-emittersaturationvoltage

Gate-Schwellenspannung

Gatethresholdvoltage

Gateladung

Gatecharge

InternerGatewiderstand

Internalgateresistor

Eingangskapazität

Inputcapacitance

Rückwirkungskapazität

Reversetransfercapacitance

Kollektor-Emitter-Reststrom

Collector-emittercut-offcurrent

Gate-Emitter-Reststrom

Gate-emitterleakagecurrent

Einschaltverzögerungszeit,induktiveLast

Turn-ondelaytime,inductiveload

Anstiegszeit,induktiveLast

Risetime,inductiveload

Abschaltverzögerungszeit,induktiveLast

Turn-offdelaytime,inductiveload

Fallzeit,induktiveLast

Falltime,inductiveload

EinschaltverlustenergieproPuls

Turn-onenergylossperpulse

AbschaltverlustenergieproPuls

Turn-offenergylossperpulse

Kurzschlußverhalten

SCdata

Wärmewiderstand,ChipbisGehäuse

Thermalresistance,junctiontocase

TemperaturimSchaltbetrieb

Temperatureunderswitchingconditions

= 100 A, V

= 15 V

= 100 A, V

= 15 V

= 4,00 mA, V

= V

, T

= 25°C

= -15 V ... +15 V

= 25°C

f = 1 MHz, T

= 25°C, V

= 25 V, V

= 0 V

f = 1 MHz, T

= 25°C, V

= 25 V, V

= 0 V

= 1200 V, V

= 0 V, T

= 25°C

= 0 V, V

= 20 V, T

= 25°C

= 100 A, V

= 600 V

= ±15 V

Gon

= 5,6

Ω

= 100 A, V

= 600 V

= ±15 V

Gon

= 5,6

Ω

= 100 A, V

= 600 V

= ±15 V

Goff

= 5,6

Ω

= 100 A, V

= 600 V

= ±15 V

Goff

= 5,6

Ω

= 100 A, V

= 600 V, L

= 30 nH

= ±15 V

Gon

= 5,6

Ω

= 100 A, V

= 600 V, L

= 30 nH

= ±15 V

Goff

= 5,6

Ω

≤

15 V, V

= 900 V

CEmax

= V

CES

-L

sCE

·di/dt

proIGBT/perIGBT

d off

12,0

off

thJC

vj op

-40

5,00

≤

10 µs, T

= 125°C

600

0,19 K/W

125

°C

preparedby:MK

approvedby:RS

dateofpublication:2013-10-03

revision:2.1

F4100R12KS4BOSA1 Related Products

	F4100R12KS4BOSA1	F4-100R12KS4
Description	IGBT MODULE VCES 1200V 100A	Darlington Transistors TRANSISTOR ARRAYS
Is it Rohs certified?	conform to	conform to
package instruction	FLANGE MOUNT, R-XUFM-X26	FLANGE MOUNT, R-XUFM-X26
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	130 A	130 A
Collector-emitter maximum voltage	1200 V	1200 V
Configuration	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 code	R-XUFM-X26	R-XUFM-X26
Number of components	4	4
Number of terminals	26	26
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
surface mount	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal off time (toff)	390 ns	390 ns
Nominal on time (ton)	190 ns	190 ns
Base Number Matches	1	1

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