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F4-100R12KS4

Description
Darlington Transistors TRANSISTOR ARRAYS
CategoryDiscrete semiconductor    The transistor   
File Size481KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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Darlington Transistors TRANSISTOR ARRAYS

F4-100R12KS4 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X26
Contacts26
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)130 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X26
Number of components4
Number of terminals26
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)660 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)390 ns
Nominal on time (ton)190 ns
VCEsat-Max3.75 V
Base Number Matches1
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
F4-100R12KS4
VorläufigeDaten
PreliminaryData
V
CES

1200
100
130
200
660
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
t
d on
4,5







typ.
3,20
3,85
5,5
1,10
5,0
6,80
0,42


0,12
0,13
0,05
0,06
0,31
0,36
0,02
0,03
max.
3,75
6,5




5,0
400

V
V
V
µC
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ

V

A
A
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
C
= 65°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150

I
C nom

I
C
I
CRM
P
tot
V
GES




A

W

V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
I
C
= 100 A, V
GE
= 15 V
I
C
= 100 A, V
GE
= 15 V
I
C
= 4,00 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 100 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 5,6
I
C
= 100 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 5,6
I
C
= 100 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 5,6
I
C
= 100 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 5,6
I
C
= 100 A, V
CE
= 600 V, L
S
= 30 nH
V
GE
= ±15 V
R
Gon
= 5,6
I
C
= 100 A, V
CE
= 600 V, L
S
= 30 nH
V
GE
= ±15 V
R
Goff
= 5,6
V
GE
15 V, V
CC
= 900 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT

t
r


t
d off


t
f


E
on

12,0

E
off
I
SC
R
thJC
T
vj op



-40
5,00


t
P
10 µs, T
vj
= 125°C
600


A
0,19 K/W
125
°C
preparedby:MK
approvedby:RS
dateofpublication:2013-10-03
revision:2.1
1

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F4-100R12KS4 F4100R12KS4BOSA1
Description Darlington Transistors TRANSISTOR ARRAYS IGBT MODULE VCES 1200V 100A
Is it Rohs certified? conform to conform to
package instruction FLANGE MOUNT, R-XUFM-X26 FLANGE MOUNT, R-XUFM-X26
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 130 A 130 A
Collector-emitter maximum voltage 1200 V 1200 V
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 code R-XUFM-X26 R-XUFM-X26
Number of components 4 4
Number of terminals 26 26
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal off time (toff) 390 ns 390 ns
Nominal on time (ton) 190 ns 190 ns
Base Number Matches 1 1
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