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BLC8G27LS-180AVY

Description
RF FET LDMOS 65V 14DB SOT12753
Categorysemiconductor    Discrete semiconductor   
File Size1MB,15 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
Environmental Compliance
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BLC8G27LS-180AVY Overview

RF FET LDMOS 65V 14DB SOT12753

BLC8G27LS-180AVY Parametric

Parameter NameAttribute value
Transistor typeLDMOS (dual), common source
frequency2.5GHz ~ 2.69GHz
Gain14dB
Voltage - Test28V
Rated current-
Noise Figure-
Current - Test200mA
Power - output28W
Voltage - Rated65V
Package/casingSOT1275-3
Supplier device packagingDFM6
BLC8G27LS-180AV
Power LDMOS transistor
Rev. 5 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS packaged asymmetrical Doherty power transistor for base station
applications at frequencies from 2496 MHz to 2690 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a Doherty production test circuit.
Test signal
1-carrier W-CDMA
[1]
f
(MHz)
2496 to 2690
V
DS
(V)
28
P
L(AV)
(W)
28
G
p
(dB)
14
D
(%)
43.5
ACPR
(dBc)
30
[1]
Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Low thermal resistance providing excellent thermal stability
Integrated ESD protection
Designed for low memory effects providing excellent pre-distortability
Lower output capacitance for improved performance in Doherty applications
Asymmetrical design to achieve optimal efficiency across the band
Decoupling leads to enable improved video bandwidth
Internally matched for ease of use (input and output)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for W-CDMA base stations and multi carrier applications in the
2496 MHz to 2690 MHz frequency range

BLC8G27LS-180AVY Related Products

BLC8G27LS-180AVY BLC8G27LS-180AVZ
Description RF FET LDMOS 65V 14DB SOT12753 RF FET LDMOS 65V 14DB SOT12753
Transistor type LDMOS (dual), common source LDMOS (dual), common source
frequency 2.5GHz ~ 2.69GHz 2.5GHz ~ 2.69GHz
Gain 14dB 14dB
Voltage - Test 28V 28V
Current - Test 200mA 200mA
Power - output 28W 28W
Voltage - Rated 65V 65V
Package/casing SOT1275-3 SOT1275-3
Supplier device packaging DFM6 DFM6
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