The WF5027 series are miniature crystal oscillator module ICs. The oscillator circuit stage has voltage regula-
tor drive, significantly reducing current consumption and crystal current, compared with existing devices, and
significantly reducing the oscillator characteristics supply voltage dependency. There are 3 pad layout package
options available for optimized mounting, making these devices ideal for miniature crystal oscillators.
FEATURES
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Wide range of operating supply voltage: 1.60 to 3.63V
Regulated voltage drive oscillator circuit for reduced
power consumption and crystal drive current
Optimized low crystal drive current oscillation for
miniature crystal units
3 pad layout options for mounting
• 5027A×, M×, Q× series: for Flip Chip Bonding
• 5027B
×
, N
×
, R
×
series: for Wire Bonding (type I)
• 5027C
×
, P
×
, S
×
series: for Wire Bonding (type II)
Recommended oscillation frequency range
For fundamental oscillator
• Low frequency version: 20MHz to 60MHz
• High frequency version: 60MHz to 100MHz
For 3rd overtone oscillator
• Low frequency version: 40MHz to 110MHz
• High frequency version
*1
: 110MHz to 180MHz
*1: under development
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Multi-stage frequency divider for low-frequency
output support: 0.9MHz (min)
Frequency divider built-in (for fundamental oscil-
lator)
• Selectable by version: f
O
, f
O
/2, f
O
/4, f
O
/8, f
O
/16,
f
O
/32, f
O
/64
−40
to 85°C operating temperature range
Standby function
• High impedance in standby mode, oscillator
stops
CMOS output duty level (1/2VDD)
50 ± 5% output duty
15pF output drive capability
Wafer form (WF5027××)
Chip form (CF5027
××
)
APPLICATIONS
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3.2
×
2.5, 2.5
×
2.0, 2.0
×
1.6 size miniature crystal oscillator modules
ORDERING INFORMATION
Device
WF5027××–4
CF5027××–4
Package
Wafer form
Chip form
SEIKO NPC CORPORATION —1
WF5027 series
SERIES CONFIGURATION
For Fundamental Oscillator
Operating
Output drive
supply
capability
voltage range
[mA]
[V]
PAD layout
Recommended
oscillation
frequency range
*1
[MHz]
20 to 60
60 to 100
20 to 60
60 to 100
20 to 60
60 to 100
Version
*2
f
O
output
5027A1
5027AP
5027B1
5027BP
5027C1
5027CP
f
O
/2
output
5027A2
5027AQ
5027B2
5027BQ
5027C2
5027CQ
f
O
/4
output
5027A3
5027AR
5027B3
5027BR
5027C3
5027CR
f
O
/8
output
5027A4
5027AS
5027B4
5027BS
5027C4
5027CS
f
O
/16
output
5027A5
5027AT
5027B5
5027BT
5027C5
5027CT
f
O
/32
output
5027A6
5027AV
5027B6
5027BV
5027C6
5027CV
f
O
/64
output
5027A7
5027AW
5027B7
5027BW
5027C7
5027CW
Flip Chip
Bonding
1.60 to 3.63
±
4
Wire Bonding
Type I
Wire Bonding
Type II
*1. The recommended oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscilla-
tion frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the
oscillation characteristics of components must be carefully evaluated.
*2. Wafer form devices have designation WF5027×× and chip form devices have designation CF5027××.
For 3rd Overtone Oscillator
Operating
Output drive
supply
capability
voltage range
[mA]
[V]
Recommended oscillation frequency range
*1
[MHz] and version
*2
PAD layout
40 to 50
Flip Chip Bonding
1.60 to 3.63
±
8
Wire Bonding Type I
Wire Bonding Type II
5027MA
5027NA
5027PA
50 to 65
5027MB
5027NB
5027PB
65 to 85
5027MC
5027NC
5027PC
85 to 110
5027MD
5027ND
5027PD
110 to 145 145 to 180
(5027QE)
(5027RE)
(5027SE)
(5027QF)
(5027RF)
(5027SF)
*1. The recommended oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscilla-
tion frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the
oscillation characteristics of components must be carefully evaluated.
*2. Wafer form devices have designation WF5027×× and chip form devices have designation CF5027××.
Versions in parentheses ( ) are under development.
VERSION NAME
Device
WF5027××–4
Package
Wafer form
Version name
WF5027
Form WF: Wafer form
CF: Chip (Die) form
−4
Oscillation frequency range, frequency divider function
Pad layout type A, M, Q: for Flip Chip Bonding
B, N, R: for Wire Bonding (type I)
C, P, S: for Wire Bonding (type II)
CF5027
××
–4
Chip form
SEIKO NPC CORPORATION —2
WF5027 series
PAD LAYOUT
(Unit:
µm)
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5027A×, M×, Q×
(for Flip Chip Bonding)
(750,690)
VSS
5
6
1
(0,0)
XT
X
2
XTN
4
3
Q
VDD
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5027B×, N×, R×
(for Wire Bonding (type I))
(750,690)
Q
5
6
1
(0,0)
XTN
X
2
XT
4
3
VSS
INHN
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5027C×, P×, S×
(for Wire Bonding (type II))
(750,690)
VDD
5
6
1
(0,0)
XT
X
2
XTN
4
3
Q
VSS
Y INHN
Y
VDD
Y INHN
Chip size: 0.75
×
0.69mm
Chip thickness: 130 ± 15µm
PAD size: 90µm
Chip base: V
SS
level
Chip size: 0.75
×
0.69mm
Chip thickness: 130 ± 15µm
PAD size: 90µm
Chip base: V
SS
level
Chip size: 0.75
×
0.69mm
Chip thickness: 130 ± 15µm
PAD size: 90µm
Chip base: V
SS
level
PAD DIMENSIONS
Pad dimensions [µm]
Pad No.
X
1
2
3
4
5
6
229
520
636
636
114
114
Y
114
114
304
531
531
304
PIN DESCRIPTION
Pad No.
5027A× 5027B× 5027C×
5027M× 5027N× 5027P×
5027Q× 5027R× 5027S×
1
2
3
4
5
6
2
1
6
5
4
3
1
2
5
4
3
6
Pin
Name
Description
XT
XTN
VDD
Q
VSS
INHN
Amplifier input
Amplifier output
(+) supply voltage
Output
(–) ground
Output state
control input
Crystal connection pins. Crystal is connected
between XT and XTN.
–
Output frequency determined by internal circuit
to one of f
O
, f
O
/2, f
O
/4, f
O
/8, f
O
/16, f
O
/32, f
O
/64
–
High impedance when LOW (oscillator stops).
Power-saving pull-up resistor built-in.
BLOCK DIAGRAM
VDD VSS
INHN
VRG
R
F
DIVIDER
CMOS
Q
XT
R
D
C
G
C
D
XTN
SEIKO NPC CORPORATION —3
WF5027 series
VERSION DISCRIMINATION INTERNAL COMPONENTS
The WF5027 series device version is not determined solely by the mask pattern, but can also be determined by
the trimming of internal trimming fuses.
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Version determined by laser trimming:
These chips are produced from a common device by the laser trimming of fuses corresponding to the ordered
version, shown in table 1. These devices are shipped for electrical characteristics testing. Laser-trimmed ver-
sions are identified externally by the combination of the version name marking (1) and the locations of
trimmed fuses (2).
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Version determined by mask pattern:
These chips are fabricated using the mask corresponding to the ordered version, and do not require trimming.
Mask-fabricated versions are identified externally by the version name marking (1) only.
Since the WF5027 series devices are manufactured using 2 methods, there are 2 types of IC chip available
(identified externally) for the same version name. The identification markings for all WF5027 series device
versions is shown in table 2.
(750,690)
(1) Version code on die
5027
NPC
(2) Trimming fuses
F1
F2
F3
F4
F5
F6
F7
F8
F9
SEIKO NPC CORPORATION —4
WF5027 series
Table 1. Version and trimming fuses
(for fundamental oscillator)
Trimming fuse number
*1
Version
F1
5027×1
5027×2
5027×3
5027×4
5027×5
5027×6
5027×7
5027×P
5027×Q
5027×R
5027×S
5027×T
5027×V
5027×W
–
×
–
×
–
×
–
–
×
–
×
–
×
–
F2
–
–
×
×
–
–
×
–
–
×
×
–
–
×
F3
–
–
–
–
×
×
×
–
–
–
–
×
×
×
F4
–
–
–
–
–
–
–
×
×
×
×
×
×
×
F5
–
–
–
–
–
–
–
×
×
×
×
×
×
×
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5027×1 trimming fuses (untrimmed)
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5027×2 trimming fuses (F1 link trimmed)
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5027×3 trimming fuses (F2 link trimmed)
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5027×4 trimming fuses (F1 and F2 links trimmed)
*1. –: untrimmed,
×:
trimmed, F6 to F9 not used
: trimmed device
Table 2. Version and trimming fuses (for 3rd overtone oscillator)
Version
5027×A
5027×B
5027×C
5027×D
5027×E
5027×F
Recommended oscillation
frequency range
*1
[MHz]
40 to 50
50 to 65
65 to 85
85 to 110
(110 to 145)
TBD
(145 to 180)
*1. Values in parentheses ( ) are provisional only.
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