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BSS138N E6433

Description
MOSFET N-CH 60V 230MA SOT-23
Categorysemiconductor    Discrete semiconductor   
File Size457KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSS138N E6433 Overview

MOSFET N-CH 60V 230MA SOT-23

BSS138N E6433 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)60V
Current - Continuous Drain (Id) at 25°C230mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs3.5 ohms @ 230mA, 10V
Vgs (th) (maximum value) when different Id1.4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)1.4nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)41pF @ 25V
FET function-
Power dissipation (maximum)360mW(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingPG-SOT23-3
Package/casingTO-236-3,SC-59,SOT-23-3
BSS138N
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
60
3.5
0.23
V
Ω
A
PG-SOT-23
Type
BSS138N
BSS138N
Parameter
Package
PG-SOT-23
PG-SOT-23
Tape and Reel
H6327: 3000
H6433: 10000
Marking
SKs
SKs
Value
0.23
0.18
0.92
Unit
A
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Continuous drain current
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.23 A,
V
DS
=48 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD sensitivity
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V
GS
JESD22-A114 (HBM)
P
tot
T
j
,
T
stg
T
A
=25 °C
±20
Class 0 (<250V)
0.36
-55 ... 150
55/150/56
V
W
°C
Rev. 2.86
page 1
2012-04-17

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Description MOSFET N-CH 60V 230MA SOT-23 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET MOSFET N-CH 60V 230MA SOT-23 MOSFET N-CH 60V 230MA SOT-23 MOSFET N-CH 60V 230MA SOT-23 MOSFET N-CH 60V 230MA SOT-23 MOSFET N-CH 60V 230MA SOT-23 Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 230mA Gate-source threshold voltage: 1.4V @ 26uA Drain-source on-resistance: 3.5Ω @ 230mA, 10V Maximum power dissipation ( Ta=25°C): 360mW Type: N-channel N-channel
FET type N channel - - N channel N channel N channel N channel -
technology MOSFET (metal oxide) - - MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide) -
Drain-source voltage (Vdss) 60V - - 60V 60V 60V 60V -
Current - Continuous Drain (Id) at 25°C 230mA(Ta) - - 230mA(Ta) 230mA(Ta) 230mA(Ta) 230mA(Ta) -
Drive voltage (maximum Rds On, minimum Rds On) 4.5V,10V - - 4.5V,10V 4.5V,10V 4.5V,10V 4.5V,10V -
Rds On (maximum value) when different Id, Vgs 3.5 ohms @ 230mA, 10V - - 3.5 ohms @ 230mA, 10V 3.5 ohms @ 230mA, 10V 3.5 ohms @ 230mA, 10V 3.5 ohms @ 230mA, 10V -
Vgs (th) (maximum value) when different Id 1.4V @ 250µA - - 1.4V @ 250µA 1.4V @ 250µA 1.4V @ 250µA 1.4V @ 250µA -
Gate charge (Qg) at different Vgs (maximum value) 1.4nC @ 10V - - 1.4nC @ 10V 1.4nC @ 10V 1.4nC @ 10V 1.4nC @ 10V -
Vgs (maximum value) ±20V - - ±20V ±20V ±20V ±20V -
Input capacitance (Ciss) at different Vds (maximum value) 41pF @ 25V - - 41pF @ 25V 41pF @ 25V 41pF @ 25V 41pF @ 25V -
Power dissipation (maximum) 360mW(Ta) - - 360mW(Ta) 360mW(Ta) 360mW(Ta) 360mW(Ta) -
Operating temperature -55°C ~ 150°C(TJ) - - -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -
Installation type surface mount - - surface mount surface mount surface mount surface mount -
Supplier device packaging PG-SOT23-3 - - PG-SOT23-3 PG-SOT23-3 PG-SOT23-3 SOT-23-3 -
Package/casing TO-236-3,SC-59,SOT-23-3 - - TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3 -
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