BSS138N E7854 datasheet, PDF - EEWORLD Datasheet

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BSS138N E7854: DescriptionMOSFET N-CH 60V 230MA SOT-23; Categorysemiconductor Discrete semiconductor; File Size457KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSS138N E7854 Overview

MOSFET N-CH 60V 230MA SOT-23

BSS138N E7854 Parametric

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	60V
Current - Continuous Drain (Id) at 25°C	230mA（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	4.5V，10V
Rds On (maximum value) when different Id, Vgs	3.5 ohms @ 230mA, 10V
Vgs (th) (maximum value) when different Id	1.4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	1.4nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	41pF @ 25V
FET function	-
Power dissipation (maximum)	360mW（Ta）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount
Supplier device packaging	PG-SOT23-3
Package/casing	TO-236-3，SC-59，SOT-23-3

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BSS138N

SIPMOS

Small-Signal-Transistor

Features

• N-channel

• Enhancement mode

• Logic level

• dv /dt rated

• Pb-free lead-plating; RoHS compliant

• Qualified according to AEC Q101

• Halogen free according to IEC61249-2-21

Product Summary

DS(on),max

3.5

0.23

PG-SOT-23

Type

BSS138N

Parameter

Package

PG-SOT-23

Tape and Reel

H6327: 3000

H6433: 10000

Marking

SKs

Value

0.23

0.18

0.92

Unit

Symbol Conditions

=25 °C

=70 °C

Continuous drain current

Pulsed drain current

D,pulse

=25 °C

=0.23 A,

=48 V,

di /dt =200 A/µs,

j,max

=150 °C

Reverse diode dv /dt

dv /dt

kV/µs

Gate source voltage

ESD sensitivity

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

JESD22-A114 (HBM)

tot

stg

=25 °C

±20

Class 0 (<250V)

0.36

-55 ... 150

55/150/56

°C

Rev. 2.86

page 1

2012-04-17

BSS138N E7854 Related Products

	BSS138N E7854	BSS138N	BSS138NL6327HTSA1	BSS138N E6433	BSS138N E6908	BSS138N E8004	BSS138N-E6327	BSS138NH6327
Description	MOSFET N-CH 60V 230MA SOT-23	230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	MOSFET N-CH 60V 230MA SOT-23	MOSFET N-CH 60V 230MA SOT-23	MOSFET N-CH 60V 230MA SOT-23	MOSFET N-CH 60V 230MA SOT-23	MOSFET N-CH 60V 230MA SOT-23	Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 230mA Gate-source threshold voltage: 1.4V @ 26uA Drain-source on-resistance: 3.5Ω @ 230mA, 10V Maximum power dissipation ( Ta=25°C): 360mW Type: N-channel N-channel
FET type	N channel	-	-	N channel	N channel	N channel	N channel	-
technology	MOSFET (metal oxide)	-	-	MOSFET (metal oxide)	MOSFET (metal oxide)	MOSFET (metal oxide)	MOSFET (metal oxide)	-
Drain-source voltage (Vdss)	60V	-	-	60V	60V	60V	60V	-
Current - Continuous Drain (Id) at 25°C	230mA（Ta）	-	-	230mA（Ta）	230mA（Ta）	230mA（Ta）	230mA（Ta）	-
Drive voltage (maximum Rds On, minimum Rds On)	4.5V，10V	-	-	4.5V，10V	4.5V，10V	4.5V，10V	4.5V，10V	-
Rds On (maximum value) when different Id, Vgs	3.5 ohms @ 230mA, 10V	-	-	3.5 ohms @ 230mA, 10V	3.5 ohms @ 230mA, 10V	3.5 ohms @ 230mA, 10V	3.5 ohms @ 230mA, 10V	-
Vgs (th) (maximum value) when different Id	1.4V @ 250µA	-	-	1.4V @ 250µA	1.4V @ 250µA	1.4V @ 250µA	1.4V @ 250µA	-
Gate charge (Qg) at different Vgs (maximum value)	1.4nC @ 10V	-	-	1.4nC @ 10V	1.4nC @ 10V	1.4nC @ 10V	1.4nC @ 10V	-
Vgs (maximum value)	±20V	-	-	±20V	±20V	±20V	±20V	-
Input capacitance (Ciss) at different Vds (maximum value)	41pF @ 25V	-	-	41pF @ 25V	41pF @ 25V	41pF @ 25V	41pF @ 25V	-
Power dissipation (maximum)	360mW（Ta）	-	-	360mW（Ta）	360mW（Ta）	360mW（Ta）	360mW（Ta）	-
Operating temperature	-55°C ~ 150°C（TJ）	-	-	-55°C ~ 150°C（TJ）	-55°C ~ 150°C（TJ）	-55°C ~ 150°C（TJ）	-55°C ~ 150°C（TJ）	-
Installation type	surface mount	-	-	surface mount	surface mount	surface mount	surface mount	-
Supplier device packaging	PG-SOT23-3	-	-	PG-SOT23-3	PG-SOT23-3	PG-SOT23-3	SOT-23-3	-
Package/casing	TO-236-3，SC-59，SOT-23-3	-	-	TO-236-3，SC-59，SOT-23-3	TO-236-3，SC-59，SOT-23-3	TO-236-3，SC-59，SOT-23-3	TO-236-3，SC-59，SOT-23-3	-

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