BSS138N
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
60
3.5
0.23
V
Ω
A
PG-SOT-23
Type
BSS138N
BSS138N
Parameter
Package
PG-SOT-23
PG-SOT-23
Tape and Reel
H6327: 3000
H6433: 10000
Marking
SKs
SKs
Value
0.23
0.18
0.92
Unit
A
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Continuous drain current
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.23 A,
V
DS
=48 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD sensitivity
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V
GS
JESD22-A114 (HBM)
P
tot
T
j
,
T
stg
T
A
=25 °C
±20
Class 0 (<250V)
0.36
-55 ... 150
55/150/56
V
W
°C
Rev. 2.86
page 1
2012-04-17
BSS138N
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Values
typ.
max.
Unit
R
thJA
-
-
350
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
= 0 V,
I
D
=250 µA
V
GS(th)
I
D (off)
V
GS
=V
DS
,
I
D
=26 µA
V
DS
=60 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=60 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=0.03 A
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
60
0.6
-
-
1.0
-
-
1.4
0.1
V
µA
-
-
5
-
-
1
3.3
10
4.0
nA
Ω
V
GS
=4.5 V,
I
D
=0.19 A
V
GS
=10 V,
I
D
=0.23 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.18 A
-
-
0.1
3.5
2.2
0.2
6.0
3.5
-
S
Rev. 2.86
page 2
2012-04-17
BSS138N
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=0 V,
I
F
=0.23 A,
T
j
=25 °C
V
R
=30 V,
I
F
=0.23 A,
di
F
/dt =100 A/µs
T
A
=25 °C
-
-
-
-
-
-
-
0.83
9.1
3.3
0.23
0.92
1.2
14.5
5
V
ns
nC
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=48 V,
I
D
=0.23 A,
V
GS
=0 to 10 V
-
-
-
-
0.10
0.3
1.0
3.3
0.14
0.4
1.4
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30 V,
V
GS
=10 V,
I
D
=0.23 A,
R
G
=6
Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
32
7.2
2.8
2.3
3.0
6.7
8.2
41
9.5
3.8
3.5
4.5
10
12.3
ns
pF
Values
typ.
max.
Unit
Rev. 2.86
page 3
2012-04-17
BSS138N
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥10
V
0.4
0.25
0.2
0.3
0.15
P
tot
[W]
0.2
I
D
[A]
0.1
0.05
0
0
40
80
120
160
0
40
80
120
160
0.1
0
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
1
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
3
limited by on-state
resistance
10 µs
10
0
100 µs
0.5
10
2
0.2
I
D
[A]
1 ms
Z
thJA
[K/W]
0.1
0.05
0.02
0.01
10
-1
10 ms
100 ms
10
1
10
-2
DC
single pulse
10
-3
1
10
100
10
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
DS
[V]
t
p
[s]
Rev. 2.86
page 4
2012-04-17
BSS138N
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
0.6
10 V
7V
5V
4.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
10
2.9 V
3.2 V
3.5 V
4V
0.5
8
4V
0.4
I
D
[A]
0.3
3.5 V
R
DS(on)
[Ω]
6
4.5 V
3.2 V
4
5V
0.2
2.9 V
7V
10 V
2
0.1
0
0
1
2
3
4
5
0
0
0.1
0.2
0.3
0.4
0.5
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
0.6
0.4
0.35
0.5
0.3
0.4
0.25
0.3
g
fs
[S]
0
1
2
3
4
5
I
D
[A]
0.2
0.15
0.2
0.1
0.1
0.05
0
0
0.00
0.10
0.20
0.30
0.40
V
GS
[V]
I
D
[A]
Rev. 2.86
page 5
2012-04-17
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