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30KPA216AE3/TR13

Description
TVS DIODE 216V 348.6V P600
CategoryCircuit protection   
File Size477KB,8 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

30KPA216AE3/TR13 Overview

TVS DIODE 216V 348.6V P600

30KPA216AE3/TR13 Parametric

Parameter NameAttribute value
typeZina
One way channel1
Voltage - Reverse OFF (Typical)216V
Voltage - Breakdown (minimum)241.3V
电压 - 箝位(最大值)@ Ipp348.6V
Current - Peak Pulse (10/1000µs)86.9A
Power - Peak Pulse30000W(30kW)
Power line protectionnone
applicationUniversal
Capacitance at different frequencies-
Operating temperature-55°C ~ 175°C(TJ)
Installation typeThrough hole
Package/casingP600, axial
Supplier device packagingP600
30KPA28Ae3 – 30KPA288CAe3
Compliant
30,000 Watt Transient Voltage Suppressor
(TVS) Protection Device
DESCRIPTION
This device clamps dangerous high-voltage short-term transients such as those produced by
the secondary effects of lightning strikes, providing circuit protection to several class levels in
the IEC61000-4-5 specification. Clamping time is virtually instantaneous. It also provides
protection from transients caused by inductive load dumps, RFI, and ESD, providing protection
to IEC61000-4-2 and -4-4.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Available in both unidirectional and bidirectional configurations
5% voltage tolerance
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant (2002/95/EC)
MSL level 1 (J-STD-020)
RoHS compliant
P600 Package
APPLICATIONS / BENEFITS
Protection from transients caused by lightning strikes, switching transients, RFI, and ESD.
Protection from the secondary effects of lightning per IEC61000-4-5
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
MAXIMUM RATINGS
@ 25
ºC
unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Lead @ 3/8 inch (10 mm)
lead length from body
Thermal Resistance, Junction to Ambient
Non Repetitive Peak Forward Surge Current
(1)
(8.3ms single half sine wave)
Rated Average Power Dissipation @ T
L
= 75 ºC,
(2)
(0.375 inch (9.5 mm) from body)
Peak Pulse Power Dissipation with a 10/1000 μs waveform
(see
Figure 1)
(3)
Peak Pulse Current with a 10/1000 μs waveform
Symbol
T
J
and
T
STG
R
ӨJL
R
ӨJA
I
FSM
P
M(AV)
P
PP
I
PP
Value
-55 to +175
8.0
77.5
400
8.0
30,000
See
Electrical
Table
260
o
Unit
o
C
C/W
C/W
A
W
W
A
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Solder Temperature @ 10 s
o
C
Notes:
1. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute
maximum
2. Mounted as shown in
Figure 5
3. Non-repetitive current pulse, per
Figure 3
and derated above T
A
= 25 ºC per
Figure 2
RF01132, Rev. B (7/26/13)
©2013 Microsemi Corporation
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