UPD44165082 datasheet, PDF - EEWORLD Datasheet

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UPD44165082: Description18M-BIT QDRII SRAM 2-WORD BURST OPERATION; File Size344KB，32 Pages; ManufacturerNEC ( Renesas ); Websitehttps://www2.renesas.cn/zh-cn/

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UPD44165082 Overview

18M-BIT QDRII SRAM 2-WORD BURST OPERATION

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD44165082, 44165182, 44165362

18M-BIT QDR

II SRAM

2-WORD BURST OPERATION

Description

The

PD44165082 is a 2,097,152-word by 8-bit, the

PD44165182 is a 1,048,576-word by 18-bit and the

PD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

technology using full CMOS six-transistor memory cell.

The

PD44165082,

PD44165182 and

PD44165362 integrates unique synchronous peripheral circuitry and a

burst counter. All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K and

/K.

These products are suitable for application which require synchronous operation, high speed, low voltage, high

density and wide bit configuration.

These products are packaged in 165-pin PLASTIC BGA.

Features

•

1.8 ± 0.1 V power supply and HSTL I/O

•

DLL circuitry for wide output data valid window and future frequency scaling

•

Separate independent read and write data ports with concurrent transactions

•

100% bus utilization DDR READ and WRITE operation

•

Two-tick burst for low DDR transaction size

•

Two input clocks (K and /K) for precise DDR timing at clock rising edges only

•

Two output clocks (C and /C) for precise flight time and clock skew matching-clock

and data delivered together to receiving device

•

Internally self-timed write control

•

Clock-stop capability with

s restart

•

User programmable impedance output

•

Fast clock cycle time : 5.0 ns (200 MHz), 6.0 ns (167 MHz), 7.5 ns (133 MHz)

•

Simple control logic for easy depth expansion

•

JTAG boundary scan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M15824EJ7V1DS00 (7th edition)

Date Published

July

2004 NS CP(K)

Printed in Japan

The mark

shows major revised points.

2001

UPD44165082 Related Products

	UPD44165082	UPD44165362F5-E75-EQ1	UPD44165362F5-E60-EQ1	UPD44165362F5-E50-EQ1	UPD44165182F5-E75-EQ1	UPD44165182F5-E60-EQ1	UPD44165182F5-E50-EQ1	UPD44165082F5-E75-EQ1	UPD44165082F5-E60-EQ1	UPD44165082F5-E50-EQ1
Description	18M-BIT QDRII SRAM 2-WORD BURST OPERATION	18M-BIT QDRII SRAM 2-WORD BURST OPERATION	18M-BIT QDRII SRAM 2-WORD BURST OPERATION	18M-BIT QDRII SRAM 2-WORD BURST OPERATION	18M-BIT QDRII SRAM 2-WORD BURST OPERATION	18M-BIT QDRII SRAM 2-WORD BURST OPERATION	18M-BIT QDRII SRAM 2-WORD BURST OPERATION	18M-BIT QDRII SRAM 2-WORD BURST OPERATION	18M-BIT QDRII SRAM 2-WORD BURST OPERATION	18M-BIT QDRII SRAM 2-WORD BURST OPERATION

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