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UPD44164365F5-E50-EQ1

Description
18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
File Size334KB,32 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPD44164365F5-E50-EQ1 Overview

18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION

DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD44164085, 44164185, 44164365
18M-BIT DDRII SRAM SEPARATE I/O
2-WORD BURST OPERATION
Description
The
µ
PD44164085 is a 2,097,152-word by 8-bit, the
µ
PD44164185 is a 1,048,576-word by 18-bit and the
µ
PD44164365 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS
technology using full CMOS six-transistor memory cell.
The
µ
PD44164085,
µ
PD44164185 and
µ
PD44164365 integrates unique synchronous peripheral circuitry and a
burst counter. All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K and
/K.
These products are suitable for application which require synchronous operation, high speed, low voltage, high
density and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
Features
1.8 ± 0.1 V power supply and HSTL I/O
DLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports
DDR read or write operation initiated each cycle
Pipelined double data rate operation
Separate data input/output bus
Two-tick burst for low DDR transaction size
Two input clocks (K and /K) for precise DDR timing at clock rising edges only
Two output clocks (C and /C) for precise flight time and clock skew matching-clock
and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability with
µ
s restart
User programmable impedance output
Fast clock cycle time : 4.0 ns (250 MHz), 5.0 ns (200 MHz), 6.0 ns (167 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M15823EJ7V1DS00 (7th edition)
Date Published
July
2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001

UPD44164365F5-E50-EQ1 Related Products

UPD44164365F5-E50-EQ1 UPD44164365F5-E60-EQ1 UPD44164085 UPD44164185F5-E60-EQ1 UPD44164185F5-E50-EQ1 UPD44164185F5-E40-EQ1 UPD44164085F5-E60-EQ1 UPD44164085F5-E50-EQ1 UPD44164085F5-E40-EQ1
Description 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
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