TPW4R008NH
MOSFETs
Silicon N-channel MOS (U-MOS-H)
TPW4R008NH
1. Applications
•
•
•
DC-DC Converters
Switching Voltage Regulators
Motor Drivers
2. Features
(1)
(2)
(3)
(4)
(5)
High-speed switching
Small gate charge: Q
SW
= 18 nC (typ.)
Low drain-source on-resistance: R
DS(ON)
= 3.3 mΩ (typ.) (V
GS
= 10 V)
Low leakage current: I
DSS
= 10
µA
(max) (V
DS
= 80 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1.0 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
DSOP Advance
Start of commercial production
©2015 Toshiba Corporation
1
2014-09
2017-03-16
Rev.3.0
TPW4R008NH
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Power dissipation
Single-pulse avalanche energy
Single-pulse avalanche current
Channel temperature
Storage temperature
(T
c
= 25
)
(Bottom drain)
(t = 100
µs)
(T
c
= 25
)
(Bottom drain)
(Note 3)
(Note 4)
(Note 5)
(Note 5)
(Note 1), (Note 2)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
P
D
P
D
E
AS
I
AS
T
ch
T
stg
Rating
80
±20
116
440
142
2.5
0.8
125
116
150
-55 to 150
A
A
W
W
W
mJ
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Channel-to-ambient thermal resistance
Bottom drain
(T
c
= 25
)
Top source
(T
c
= 25
)
(T
a
= 25
)
(T
a
= 25
)
(Note 3)
(Note 4)
Symbol
R
th(ch-c)
R
th(ch-c)
R
th(ch-a)
R
th(ch-a)
Max
0.88
0.93
50
156
Unit
/W
/W
/W
/W
Note 1: Ensure that the channel temperature does not exceed 150
.
Note 2: Limited by silicon chip capability.
Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 5: V
DD
= 60 V, T
ch
= 25
(initial), L = 7.9
µH,
I
AS
= 116 A
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
©2015 Toshiba Corporation
2
2017-03-16
Rev.3.0
TPW4R008NH
6. Electrical Characteristics
6.1. Static Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
V
th
R
DS(ON)
Test Condition
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 80 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
I
D
= 10 mA, V
GS
= -20 V
V
DS
= 10 V, I
D
= 1.0 mA
V
GS
= 10 V, I
D
= 50 A
Min
80
60
2.0
Typ.
3.3
Max
±0.1
10
4.0
4.0
mΩ
V
Unit
µA
6.2. Dynamic Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
r
g
t
r
t
on
t
f
t
off
See Fig. 6.2.1
Test Condition
V
DS
= 40 V, V
GS
= 0 V, f = 1 MHz
Min
Typ.
4100
32
890
1.2
8.6
25
12
52
Max
5300
64
1.8
Ω
ns
Unit
pF
V
DD
≈
40 V
V
GS
= 0 V/10 V
I
D
= 50 A
R
L
= 0.8
Ω
R
GG
= 4.7
Ω
R
GS
= 4.7
Ω
Duty
≤
1 %, t
w
= 10
µs
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Symbol
Q
g
Q
gs1
Q
gd
Q
SW
Test Condition
V
DD
≈
40 V, V
GS
= 10 V, I
D
= 50 A
Min
Typ.
59
18
12
18
Max
Unit
nC
6.4. Source-Drain Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 6)
Symbol
I
DRP
(t = 100
µs)
V
DSF
t
rr
Q
rr
I
DR
= 116 A, V
GS
= 0 V
V
R
= 40 V, I
DR
= 29 A,
V
GS
= 0 V, -dI
DR
/dt = 100 A/µs
Test Condition
Min
Typ.
54
72
Max
440
-1.2
Unit
A
V
ns
nC
Note 6: Ensure that the channel temperature does not exceed 150
.
©2015 Toshiba Corporation
3
2017-03-16
Rev.3.0
TPW4R008NH
7. Marking
Fig. 7.1 Marking
©2015 Toshiba Corporation
4
2017-03-16
Rev.3.0
TPW4R008NH
8. Characteristics Curves (Note)
Fig. 8.1 I
D
- V
DS
Fig. 8.2 I
D
- V
DS
Fig. 8.3 I
D
- V
GS
Fig. 8.4 V
DS
- V
GS
Fig. 8.5 R
DS(ON)
- I
D
Fig. 8.6 I
DR
- V
DS
©2015 Toshiba Corporation
5
2017-03-16
Rev.3.0
京公网安备 11010802033920号
EEWORLD
