AO4446
30V N-Channel MOSFET
General Description
The AO4446 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. This device is ideally suited for use
in PWM applications.
Product Summary
V
DS
(V) = 30V
I
D
= 15A (V
GS
= 10V)
R
DS(ON)
< 8.5mΩ (V
GS
= 10V)
R
DS(ON)
< 14.5mΩ (V
GS
= 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
D
Bottom View
D
G
S
S
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
B
Repetitive avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
B
B
Maximum
30
±20
15
12
40
20
50
3
2.1
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
33
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
AO4446
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=15A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=11A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=15A
I
S
=1A,V
GS
=0V
C
T
J
=125°
1
40
6.9
11
11.8
27
0.71
1
4
1520
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
306
214
0.47
33.7
V
GS
=10V, V
DS
=15V, I
D
=15A
17
6.2
10
7.2
V
GS
=10V, V
DS
=15V, R
L
=1.0Ω,
R
GEN
=3Ω
I
F
=15A, dI/dt=100A/µs
8.2
22
6.7
24
19
30
0.7
40
20
1825
8.5
13.5
14.5
2.2
Min
30
1
5
100
3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=15A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The
C.
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 3: Nov. 2010
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The SOA
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
I
D
(A)
15
10
V
GS
=3.5V
5
0
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
10
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
2
Normalized On-Resistance
V
GS
=4.5V
1.8
1.6
1.4
1.2
1
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=4.5V
I
D
=11A
V
GS
=10V
I
D
=15A
I
D
(A)
10V
5V
4.5V
V
GS
=4V
40
125°C
30
20
25°C
60
50
V
DS
=5V
16
14
R
DS(ON)
(m
Ω
)
12
10
8
6
V
GS
=10V
20
I
D
=15A
1.0E+02
1.0E+01
125°C
16
R
DS(ON)
(m
Ω
)
125°C
I
S
(A)
1.0E+00
1.0E-01
25°C
1.0E-02
1.0E-03
12
8
25°C
4
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
5
10
15
20
25
30
35
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=15A
Capacitance (pF)
2500
2000
C
iss
1500
1000
C
oss
500
C
rss
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
100
R
DS(ON)
limited
10
I
D
(Amps)
1ms
10ms
0.1s
1s
1
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
100
10s
DC
100µs
Power (W)
10µs
80
T
J(Max)
=150°C
T
A
=25°C
60
40
20
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
0.001
0.00001
T
on
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
京公网安备 11010802033920号
EEWORLD
