1B5400G datasheet, PDF - EEWORLD Datasheet

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1B5400G: Description3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD; Categorysemiconductor Discrete semiconductor; File Size48KB，2 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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1B5400G Overview

3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD

1B5400G Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	PLASTIC PACKAGE-2
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
terminal coating	MATTE Tin
Terminal location	AXIAL
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	rectifier diode
application	GENERAL PURPOSE
Phase	1
Maximum repetitive peak reverse voltage	50 V
Maximum average forward current	3 A
Maximum non-repetitive peak forward current	150 A

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LESHAN RADIO COMPANY, LTD.

1N5400G – 1N5406G

3A

3A GENERAL PURPOSE GPP DIODES

TYPE

Maximum

Peak Reverse

Voltage

PRV

V

PK

Maximum Average

Rectified Current

@ Half-Wave

Resistive Load 60Hz

I

O

@ T

L

A

AV

ºC

Maximum

Forward Peak

Surge Current @

8.3ms Superimposed

I

FM

(Surge)

A

PK

Maximum

Reverse

Current @ PRV

@ T

A

=25ºC

I

R

Maximum

Forward

Voltage

@ T

A

=25ºC

I

FM

A

PK

V

FM

V

PK

Package

Dimensions

µAdc

1N5400G

1N5401G

1N5402G

1N5403G

1N5404G

1N5405G

1N5406G

50

100

200

400

600

800

1000

3.0

105

200

5.0

3.0

1.0

DO –

201AD

1.0(25.4)

MIN

.375(9.5)

.335(8.5)

1.0(25.4)

MIN

.052(1.3)

.048(1.2)

DIA

.220(5.6) DIA

.197(5.0)

DO – 201AD

34A–1/2

1B5400G Related Products

	1B5400G	1N5400G	1N5401G	1N5402G	1N5404G	1N5406G
Description	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	RECTIFIER DIODE
Number of terminals	2	2	2	2	2	2
Number of components	1	1	1	1	1	1
Terminal form	Wire	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Shell connection	isolation	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Diode component materials	silicon	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	rectifier diode	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Phase	1	1	1	1	1	1
Maximum repetitive peak reverse voltage	50 V	50 V	100 V	200 V	400 V	600 V
Maximum non-repetitive peak forward current	150 A	200 A	200 A	200 A	200 A	200 A
Maker	-	LRC	LRC	LRC	LRC	LRC
package instruction	-	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	-	unknown	unknown	unknown	unknown	unknown
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum forward voltage (VF)	-	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JEDEC-95 code	-	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 code	-	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C
Maximum output current	-	3 A	3 A	3 A	3 A	3 A
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum reverse current	-	10 µA	10 µA	10 µA	10 µA	10 µA
surface mount	-	NO	NO	NO	NO	NO

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