1N5404G datasheet, PDF - EEWORLD Datasheet

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1N5404G: Description3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD; CategoryDiscrete semiconductor diode; File Size48KB，2 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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1N5404G Overview

3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5404G Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	O-PALF-W2
Reach Compliance Code	unknown
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	200 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-50 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	10 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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LESHAN RADIO COMPANY, LTD.

1N5400G – 1N5406G

3A GENERAL PURPOSE GPP DIODES

TYPE

Maximum

Peak Reverse

Voltage

PRV

Maximum Average

Rectified Current

@ Half-Wave

Resistive Load 60Hz

@ T

ºC

Maximum

Forward Peak

Surge Current @

8.3ms Superimposed

(Surge)

Maximum

Reverse

Current @ PRV

@ T

=25ºC

Maximum

Forward

Voltage

@ T

=25ºC

Package

Dimensions

µAdc

1N5400G

1N5401G

1N5402G

1N5403G

1N5404G

1N5405G

1N5406G

100

200

400

600

800

1000

3.0

105

200

5.0

3.0

1.0

DO –

201AD

1.0(25.4)

MIN

.375(9.5)

.335(8.5)

1.0(25.4)

MIN

.052(1.3)

.048(1.2)

DIA

.220(5.6) DIA

.197(5.0)

DO – 201AD

34A–1/2

1N5404G Related Products

	1N5404G	1B5400G	1N5400G	1N5401G	1N5402G	1N5406G
Description	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	RECTIFIER DIODE
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	isolation	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Diode component materials	SILICON	silicon	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	rectifier diode	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum non-repetitive peak forward current	200 A	150 A	200 A	200 A	200 A	200 A
Number of components	1	1	1	1	1	1
Phase	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum repetitive peak reverse voltage	400 V	50 V	50 V	100 V	200 V	600 V
Terminal form	WIRE	Wire	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	LRC	-	LRC	LRC	LRC	LRC
package instruction	O-PALF-W2	-	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	-	unknown	unknown	unknown	unknown
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE
Maximum forward voltage (VF)	1.1 V	-	1.1 V	1.1 V	1.1 V	1.1 V
JEDEC-95 code	DO-201AD	-	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 code	O-PALF-W2	-	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-50 °C	-	-50 °C	-50 °C	-50 °C	-50 °C
Maximum output current	3 A	-	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	-	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum reverse current	10 µA	-	10 µA	10 µA	10 µA	10 µA
surface mount	NO	-	NO	NO	NO	NO

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