75 Ohm SP2T RF Switch
5 MHz to 3000 MHz
F2970
Datasheet
Description
The F2970 is a high reliability, low insertion loss, 75 Ω absorptive
SP2T RF switch designed for a multitude of cable systems and
other RF applications. This device covers a broad frequency
range from 5 MHz to 3000 MHz. In addition to providing low
insertion loss, the F2970 also delivers excellent linearity and
isolation performance while providing a 75 Ω termination for the
unselected port.
The F2970 uses a single positive supply voltage and supports
3.3 V logic.
Features
Low Insertion Loss:
0.32 dB @ 1200 MHz
High Isolation:
70 dB @ 1200 MHz (RF1/RF2 to RFC)
Excellent Linearity:
IIP3 of 63 dBm
Selectable Logic Control
Operating Temperature: -40 °C to +105 °C
4 mm x 4 mm 20-pin LQFN package
Competitive Advantage
The F2970 provides broadband RF performance to support the
CATV market along with high power handling, and high isolation.
Low Insertion Loss
High Isolation
Excellent Linearity
Extended Temperature: -40 °C to +105 °C
Block Diagram
Figure 1. Block Diagram
RFC
Typical Applications
CATV/Broadband Applications
Headend
Fiber/HFC Distribution Nodes
Distribution Amplifiers
Switch Matrix
DTV Tuner Input Select
DVR/PVR/Set-top box
CATV Test Equipment
RF1
RF2
75Ω
75Ω
C1
C2
© 2016 Integrated Device Technology, Inc.
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November 11, 2016
F2970 Datasheet
Pin Assignments
Figure 2. Pin Assignments for 4 mm x 4 mm x 0.75 mm 20-pin LQFN, NCG20 – Top View
Pin Descriptions
Table 1. Pin Descriptions
Number
1, 2, 4, 5, 6,
7, 9, 10, 11,
12, 14, 15,
18, 19
3
8
13
16
17
20
Name
GND
Description
Ground these pins as close to the device as possible.
RF1 Port. Matched to 75 ohms. If this pin is not 0V DC, then an external coupling capacitor must be
used.
RFC Port. Matched to 75 ohms. If this pin is not 0V DC, then an external coupling capacitor must be
used.
RF2 Port. Matched to 75 ohms. If this pin is not 0V DC, then an external coupling capacitor must be
used.
Control pin to set switch state. See Table 8.
Control pin to set switch state. See Table 8.
Power Supply. Bypass to GND with capacitors shown in the Typical Application Circuit as close as
possible to pin.
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple
ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple ground
vias are also required to achieve the specified RF performance.
RF1
RFC
RF2
C2
C1
V
DD
EP
© 2016 Integrated Device Technology, Inc.
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November 11, 2016
F2970 Datasheet
Absolute Maximum Ratings
Stresses beyond those listed below may cause permanent damage to the device. Functional operation of the device at these or any other
conditions beyond those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Table 2. Absolute Maximum Ratings
Parameter
V
DD
to GND
C1, C2 to GND
RF1, RF2, RFC to GND
RF1 or RF2 as an input
(Connected to RFC)
RFC as an input
(Connected to RF1 or RF2)
RF1 or RF2 as an input
(Terminated states)
Symbol
V
DD
V
logic
V
RF
Minimum
-0.3
-0.3
-0.3
Maximum
4.0
Lower of
(V
DD
+0.3, 3.9)
+0.3
30
Units
V
V
V
Maximum Input CW Power
[a]
P
ABS
30
26
dBm
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10s)
ElectroStatic Discharge – HBM
(JEDEC/ESDA JS-001-2012)
ElectroStatic Discharge – CDM
(JEDEC 22-C101F)
T
jmax
T
ST
T
LEAD
V
ESDHBM
V
ESDCDM
-65
140
150
260
2000
(Class 2)
1500
(Class C3)
°C
°C
°C
V
V
© 2016 Integrated Device Technology, Inc.
≤
≤
a. Levels based on: V
DD
= 2.7 V to 3.6 V, 5 MHz
F
RF
3000 MHz, Tc = 105
°
C, Z
S
= Z
L
= 75 ohms.
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November 11, 2016
F2970 Datasheet
Recommended Operating Conditions
Table 3. Recommended Operating Conditions
Parameter
Supply Voltage
Operating Temp Range
RF Frequency Range
Symbol
V
DD
T
CASE
F
RF
Condition
Exposed Paddle Temperature
Min
2.7
-40
5
Typ
Max
3.6
+105
3000
27
27
24
21
21
21
17
17
Units
V
°C
MHz
T
C
= 85°C
RF Continuous
T
C
= 105°C
Input CW Power
P
RF
dBm
T
C
= 85°C
RF1 / RF2 Input, Terminated
(Non-Switched)
[a]
State
T
C
= 105°C
RFC Input switching between T
C
= 85°C
RF Continuous
RF1 and RF2
T
C
= 105°C
Input Power
P
RFSW
dBm
RF1 or RF2 as input, switched T
C
= 85°C
[a]
(RF Hot Switching CW)
between RFC and Term.
T
C
= 105°C
RF1 Port Impedance
Z
RF
1
Single ended
75
RF2 Port Impedance
Z
RF2
Single ended
75
Ω
RFC Port Impedance
Z
RFC
Single ended
75
a. Levels based on: V
DD
= 2.7 V to 3.6 V, 5 MHz F
RF
3000 MHz, Z
S
= Z
L
= 75 ohms. See Figure 3 for power handling
derating vs RF frequency.
RFC connected to RF1 or RF2
Figure 3. Maximum RF Input Operating Power vs. RF Frequency
© 2016 Integrated Device Technology, Inc.
≤
≤
4
November 11, 2016
F2970 Datasheet
Electrical Characteristics
Table 4. Electrical Characteristics
Typical Application Circuit: V
DD
= 3.0 V, T
C
= +25 °C, F
RF
= 1200 MHz, Driven Port = RF1 or RF2, Input Power = 0 dBm, Z
S
= Z
L
= 75 ohms.
PCB board trace and connector losses are de-embedded unless otherwise noted.
Parameter
Logic Input High Threshold
[c]
Logic Input Low Threshold
[c]
Logic Current
V
DD
DC Current
[c]
Symbol
V
IL
I
IH
, I
IL
I
DD
Condition
Minimum
0.7 x V
DD
[a]
-0.3
[b]
180
20
Typical
Maximum
V
DD
0.3 x V
DD
500
30
Units
V
V
nA
µA
For each control pin
Logic Inputs at GND or V
DD
5 – 250 MHz
0.25
250 – 750 MHz
0.30
750 – 1000 MHz
0.30
Insertion Loss
IL
1000 – 1200 MHz
0.32
0.57
1200 – 2000 MHz
0.32
2000 – 3000 MHz
0.35
5 – 250 MHz
79
84
250 – 750 MHz
69
74
750 – 1000 MHz
67
72
Isolation
ISO
RFC
(RFC to RF1 / RF2)
1000 – 1200 MHz
65
70
1200 – 2000 MHz
62
67
2000 – 3000 MHz
57
5 – 250 MHz
79
84
250 – 750 MHz
69
74
750 – 1000 MHz
66
71
Isolation
ISO
R12
(RF1 to RF2)
1000 – 1200 MHz
63
68
1200 – 2000 MHz
57
62
2000 – 3000 MHz
53
5 – 250 MHz
25
250 – 750 MHz
20
750 – 1000 MHz
18
RF1, RF2, RFC Return Loss
RL
IL
(Insertion Loss State)
1000 – 1200 MHz
18
1200 – 2000 MHz
18
2000 – 3000 MHz
18
a. Items in min/max columns in
bold italics
are Guaranteed by Test.
b. Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
c. Increased I
DD
current will result if logic low level is above ground and up to V
IL
max. Similarly, increased I
DD
current will
result if logic high level is below V
DD
and down to V
IH
min.
© 2016 Integrated Device Technology, Inc.
≤
≤
V
IH
2.7 V
V
DD
3.6 V
dB
dB
dB
dB
5
November 11, 2016
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