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FDMS3610S PowerTrench
®
Power Stage
December 2011
FDMS3610S
PowerTrench
®
Power Stage
25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
Max r
DS(on)
= 5.0 mΩ at V
GS
= 10 V, I
D
= 17.5 A
Max r
DS(on)
= 5.7 mΩ at V
GS
= 4.5 V, I
D
= 16 A
Q2: N-Channel
Max r
DS(on)
= 1.8 mΩ at V
GS
= 10 V, I
D
= 30 A
Max r
DS(on)
= 2.2 mΩ at V
GS
= 4.5 V, I
D
= 27 A
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
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5. Identifiers and keywords of C language
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Abstract: In recent years, with the establishment and grid-connected power generation of a large number of solar photovoltaic power stations at home and abroad, photovoltaic grid-connected inverter...[Details]
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FPGA/CPLD
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