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FDMC2674 N-Channel UltraFET Trench MOSFET
September 2014
FDMC2674
N-Channel UltraFET Trench MOSFET
220V, 7.0A, 366mΩ
Features
Max r
DS(on)
= 366mΩ at V
GS
= 10V, I
D
= 1.0A
Typ Q
g
= 12.7nC at V
GS
= 10V
Low Miller charge
Low Q
rr
Body Diode
Optimized efficiency at high frequencies
UIS Capability ( Single Pulse and Repetitive Pulse)
RoHS Compliant
General Description
UltraFET device combines characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
DS(on)
, low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
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