IRFR120NCPBF datasheet, PDF - EEWORLD Datasheet

IRFR120NCPBF: DescriptionMOSFET N-CH 100V 9.4A DPAK; Categorysemiconductor Discrete semiconductor; File Size389KB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRFR120NCPBF Overview

MOSFET N-CH 100V 9.4A DPAK

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	100V
Current - Continuous Drain (Id) at 25°C	9.4A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	210 milliohms @ 5.6A, 10V
Vgs (th) (maximum value) when different Id	4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	25nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	330pF @ 25V
FET function	-
Power dissipation (maximum)	48W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	surface mount
Supplier device packaging	D-Pak
Package/casing	TO-252-3, DPak (2 leads + tab), SC-63

PD - 95067A

IRFR/U120NPbF

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12/9/04

	IRFR120NCPBF	IRFR120NCTRLPBF
Description	MOSFET N-CH 100V 9.4A DPAK	MOSFET N-CH 100V 9.4A DPAK
FET type	N channel	N channel
technology	MOSFET (metal oxide)	MOSFET (metal oxide)
Drain-source voltage (Vdss)	100V	100V
Current - Continuous Drain (Id) at 25°C	9.4A（Ta）	9.4A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	10V	10V
Rds On (maximum value) when different Id, Vgs	210 milliohms @ 5.6A, 10V	210 milliohms @ 5.6A, 10V
Vgs (th) (maximum value) when different Id	4V @ 250µA	4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	25nC @ 10V	25nC @ 10V
Vgs (maximum value)	±20V	±20V
Input capacitance (Ciss) at different Vds (maximum value)	330pF @ 25V	330pF @ 25V
Power dissipation (maximum)	48W（Tc）	48W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）	-55°C ~ 175°C（TJ）
Installation type	surface mount	surface mount
Supplier device packaging	D-Pak	D-Pak
Package/casing	TO-252-3, DPak (2 leads + tab), SC-63	TO-252-3, DPak (2 leads + tab), SC-63

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