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IRFR120NCTRLPBF

Description
MOSFET N-CH 100V 9.4A DPAK
Categorysemiconductor    Discrete semiconductor   
File Size389KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRFR120NCTRLPBF Overview

MOSFET N-CH 100V 9.4A DPAK

IRFR120NCTRLPBF Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)100V
Current - Continuous Drain (Id) at 25°C9.4A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs210 milliohms @ 5.6A, 10V
Vgs (th) (maximum value) when different Id4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)25nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)330pF @ 25V
FET function-
Power dissipation (maximum)48W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingD-Pak
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
PD - 95067A
IRFR/U120NPbF
Lead-Free
www.irf.com
1
12/9/04

IRFR120NCTRLPBF Related Products

IRFR120NCTRLPBF IRFR120NCPBF
Description MOSFET N-CH 100V 9.4A DPAK MOSFET N-CH 100V 9.4A DPAK
FET type N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 100V 100V
Current - Continuous Drain (Id) at 25°C 9.4A(Ta) 9.4A(Ta)
Drive voltage (maximum Rds On, minimum Rds On) 10V 10V
Rds On (maximum value) when different Id, Vgs 210 milliohms @ 5.6A, 10V 210 milliohms @ 5.6A, 10V
Vgs (th) (maximum value) when different Id 4V @ 250µA 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 25nC @ 10V 25nC @ 10V
Vgs (maximum value) ±20V ±20V
Input capacitance (Ciss) at different Vds (maximum value) 330pF @ 25V 330pF @ 25V
Power dissipation (maximum) 48W(Tc) 48W(Tc)
Operating temperature -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ)
Installation type surface mount surface mount
Supplier device packaging D-Pak D-Pak
Package/casing TO-252-3, DPak (2 leads + tab), SC-63 TO-252-3, DPak (2 leads + tab), SC-63
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