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RJK1056DPB-00#J5

Description
MOSFET N-CH 100V 25A LFPAK
Categorysemiconductor    Discrete semiconductor   
File Size144KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

RJK1056DPB-00#J5 Overview

MOSFET N-CH 100V 25A LFPAK

RJK1056DPB-00#J5 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)100V
Current - Continuous Drain (Id) at 25°C25A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs14 milliohms @ 12.5A, 10V
Vgs (th) (maximum value) when different Id-
Gate charge (Qg) at different Vgs (maximum value)41nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)3000pF @ 10V
FET function-
Power dissipation (maximum)65W(Tc)
Operating temperature150°C(TJ)
Installation typesurface mount
Supplier device packagingLFPAK
Package/casingSC-100,SOT-669
Preliminary
Datasheet
RJK1056DPB
100V, 25A, 14m max.
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Low drive current
Low on-resistance
R
DS(on)
= 11 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
High density mounting
R07DS1059EJ0200
(Previous: REJ03G1888-0100)
Rev.2.00
Apr 11, 2013
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at L=10uH, Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP
E
AS Note 2
Pch
Note3
ch-C
Tch
Tstg
Note 2
Ratings
100
20
25
100
25
25
6.3
65
1.92
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS1059EJ0200 Rev.2.00
Apr 11, 2013
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