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FD900R12IP4DVBOSA1

Description
IGBT MODULE VCES 1200V 900A
CategoryDiscrete semiconductor    The transistor   
File Size2MB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

FD900R12IP4DVBOSA1 Overview

IGBT MODULE VCES 1200V 900A

FD900R12IP4DVBOSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionFLANGE MOUNT, R-PUFM-X10
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time50 weeks
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 codeR-PUFM-X10
Number of components1
Number of terminals10
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsGENERAL PURPOSE
Transistor component materialsSILICON
Nominal off time (toff)1300 ns
Nominal on time (ton)370 ns
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FD900R12IP4DV
PrimePACK™2ModulmitTrench/FeldstoppIGBT4,größererEmitterControlled4Diode
PrimePACK™2modulewithTrench/FieldstopIGBT4,enlargedEmitterControlled4diode
VorläufigeDaten/PreliminaryData
V
CES
= 1200V
I
C nom
= 900A / I
CRM
= 1800A
TypischeAnwendungen
• Hybrid-Nutzfahrzeuge
ElektrischeEigenschaften
• ErweiterteSperrschichttemperaturT
vjop
• GroßeDC-Festigkeit
Hohe Kurzschlussrobustheit, selbstlimitierender
Kurzschlussstrom
• NiedrigesV
CEsat
• V
CEsat
mitpositivemTemperaturkoeffizienten
MechanischeEigenschaften
• 4kVAC1minIsolationsfestigkeit
• GehäusemitCTI>400
• GroßeLuft-undKriechstrecken
• HoheLast-undthermischeWechselfestigkeit
• HoheLeistungsdichte
• SubstratfürkleinenthermischenWiderstand
TypicalApplications
• CommercialAgricultureVehicles
ElectricalFeatures
• ExtendedOperationTemperatureT
vjop
• HighDCStability
High Short Circuit Capability, Self Limiting Short
CircuitCurrent
• LowV
CEsat
• V
CEsat
withpositiveTemperatureCoefficient
MechanicalFeatures
• 4kVAC1minInsulation
• PackagewithCTI>400
• HighCreepageandClearanceDistances
• HighPowerandThermalCyclingCapability
• HighPowerDensity
• SubstrateforLowThermalResistance
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2014-04-29
revision:2.0
1
ULapproved(E83335)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
preparedby:TA
approvedby:IB
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