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AOT5B60D

Description
IGBT 600V 10A 82.4W TO220
Categorysemiconductor    Discrete semiconductor   
File Size642KB,9 Pages
ManufacturerAOS
Websitehttp://www.aosmd.com
Environmental Compliance
Download Datasheet Parametric View All

AOT5B60D Overview

IGBT 600V 10A 82.4W TO220

AOT5B60D Parametric

Parameter NameAttribute value
IGBT type-
Voltage - collector-emitter breakdown (maximum)600V
Current - Collector (Ic) (Maximum)23A
Pulse current - collector (Icm)20A
Vce(on) when different Vge,Ic1.8V @ 15V, 5A
Power - Max82.4W
switching energy140µJ (on), 40µJ (off)
input typestandard
gate charge9.4nC
Td (on/off) value at 25°C12ns/83ns
Test Conditions400V, 5A, 60 Ohm, 15V
Reverse recovery time (trr)98ns
Operating temperature-55°C ~ 175°C(TJ)
Installation typeThrough hole
Package/casingTO-220-3
Supplier device packagingTO-220
AOT5B60D
600V, 5A Alpha IGBT
TM
with Diode
General Description
The Alpha IGBT
TM
line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations. The co-
packaged soft diode is optimized to minimize losses in
motor control applications.
Product Summary
V
CE
I
C
(T
C
=100°C)
V
CE(sat)
(T
C
=25°C)
600V
5A
1.55V
100% E
on
/E
off
Tested
100% Q
rr
Tested
100% Short Circuit Current Tested*
Top View
TO-220
C
G
AOT5B60D
C
E
G
E
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
V
CE
Gate-Emitter Voltage
Continuous Collector T
C
=25°C
T
C
=100°C
Current
A
Pulsed Collector Current, Limited by T
Jmax
Turn off SOA, V
CE
600V, Limited by T
Jmax
Continuous Diode
Forward Current
T
C
=25°C
T
C
=100°C
V
GE
I
C
I
CM
I
LM
I
F
I
FM
t
SC
AOT5B60D
600
±20
23
18
20
20
10
5
20
10
82.4
41.2
-55 to 175
300
AOT5B60D
65
1.82
3
Units
V
V
A
A
A
A
A
µs
Diode Pulsed Current, Limited by T
Jmax
Short circuit withstanding time V
GE
= 15V, V
CE
400V, Delay between short circuits
1.0s,
T
C
=25°C
T
C
=25°C
Power Dissipation
T
C
=100°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
* V
CE
equal to 50V
Note A:I
C
limited by package limitation
P
D
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θ
JC
R
θ
JC
W
°C
°C
Units
°C/W
°C/W
°C/W
Rev.4.0: Jan 2014
www.aosmd.com
Page 1 of 9
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