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1N4002G

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size99KB,2 Pages
ManufacturerBytes
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1N4002G Overview

SIGNAL DIODE

1N4002G Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSIGNAL DIODE
1N4001G
THRU
1N4007G
1.0 AMP GLASS PASSIVATED RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Glass passivated junction
1.0 Ampere
DO-41
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.34 grams
.205(5.2)
.166(4.2)
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=75 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance R
θ
JA (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
1.1
5.0
50
15
50
-65
+175
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
µA
µA
pF
C/W
C
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.
204

1N4002G Related Products

1N4002G 1N4001G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G
Description SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
state ACTIVE ACTIVE ACTIVE DISCONTINUED ACTIVE - ACTIVE
Diode type SIGNAL DIODE Signal diode Signal diode Signal diode SIGNAL DIODE - Signal diode
Number of terminals - 2 - 2 2 - 2
Number of components - 1 - 1 1 - 1
Processing package description - Plastic, DO-41, 2 PIN - PLASTIC PACKAGE-2 GREEN, PLASTIC PACKAGE-2 - PLASTIC PACKAGE-2
packaging shape - round - round ROUND - round
Package Size - LONG FORM - LONG FORM LONG FORM - LONG FORM
Terminal form - Wire - Wire WIRE - Wire
Terminal location - AXIAL - AXIAL AXIAL - AXIAL
Packaging Materials - Plastic/Epoxy - Plastic/Epoxy PLASTIC/EPOXY - Plastic/Epoxy
structure - single - single SINGLE - single
Shell connection - isolation - isolation ISOLATED - isolation
Diode component materials - silicon - silicon SILICON - silicon
Maximum repetitive peak reverse voltage - 50 V - 400 V 600 V - 1000 V
Maximum average forward current - 1 A - 1 A 1 A - 1 A

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