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FDB8876

Description
MOSFET N-CH 30V 71A D2PAK
Categorysemiconductor    Discrete semiconductor   
File Size252KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FDB8876 Overview

MOSFET N-CH 30V 71A D2PAK

FDB8876 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C71A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs8.5 milliohms @ 40A, 10V
Vgs (th) (maximum value) when different Id2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)45nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)1700pF @ 15V
FET function-
Power dissipation (maximum)70W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingTO-263AB
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB
FDB8876 N-Channel PowerTrench
®
MOSFET
November 2005
FDB8876
N-Channel PowerTrench
®
MOSFET
30V, 71A, 8.5mΩ
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Features
r
DS(ON)
= 8.5mΩ, V
GS
= 10V, I
D
= 40A
r
DS(ON)
= 10.3mΩ, V
GS
= 4.5V, I
D
= 40A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
RoHS Compliant
D
GATE
G
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
S
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25 C, V
GS
= 4.5V)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Operating and Storage Temperature
o
Parameter
Ratings
30
±20
71
65
Figure 4
180
70
-55 to 175
Units
V
V
A
A
A
mJ
W
o
C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263,1in
2
copper pad area
2.14
43
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDB8876
Device
FDB8876
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
©2005 Fairchild Semiconductor Corporation
FDB8876 Rev. A
1
www.fairchildsemi.com
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