FDB8878 N-Channel PowerTrench
®
MOSFET
November 2005
FDB8878
N-Channel Logic Level PowerTrench
®
MOSFET
30V, 48A, 14mΩ
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Features
r
DS(ON)
= 14mΩ, V
GS
= 10V, I
D
= 40A
r
DS(ON)
= 18mΩ, V
GS
= 4.5V, I
D
= 36A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
RoHS Compliant
D
GATE
G
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
D
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
I
D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25 C, V
GS
= 4.5V)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Operating and Storage Temperature
(Note 4)
L = 1mH, I
AS
= 11A
L = 0.03mH,I
AS
= 38A
o
Parameter
Ratings
30
±20
48
42
170
60
21
47.3
-55 to 175
Units
V
V
A
A
A
mJ
W
o
C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
3.7
43
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDB8878
Device
FDB8878
Package
TO-263
Reel Size
13”
Tape Width
24mm
Quantity
800 units
©2005 Fairchild Semiconductor Corporation
FDB8878 Rev. A
1
www.fairchildsemi.com
FDB8878 N-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
I
D
= 250µA,
Referenced to 25
o
C
V
DS
= 24V
V
GS
= 0V
V
GS
= ±20V
-
T
A
= 150 C
o
30
-
21
-
-
-
-
V
mV/
o
C
1
250
±100
-
-
µA
nA
On Characteristics
V
GS(TH)
∆V
GS(TH)
∆T
J
r
DS(ON)
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250µA
I
D
= 250µA,
Referenced to 25
o
C
I
D
= 40A, V
GS
= 10V
Drain to Source On Resistance
I
D
= 36A, V
GS
= 4.5V
I
D
= 40, V
GS
= 10V,
T
A
= 175
o
C
-
-
-
1.2
1.7
-5
12
15
19
14
18
21
mΩ
2.5
V
mV/
o
C
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
f = 1MHz
V
GS
= 0V to 10V V
DD
= 15V
V
GS
= 0V to 5V I
D
= 40A
I
g
= 1.0mA
-
-
-
-
-
-
-
-
927
188
117
3.0
17.1
9.2
2.6
1.7
3.7
23
12
-
-
-
1235
250
175
pF
pF
pF
Ω
nC
nC
nC
nC
nC
Switching Characteristics
(V
GS
= 10V)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 15V, I
D
= 40A
V
GS
= 10V, R
GS
= 16Ω
-
-
-
-
-
-
255
11.1
244
14.8
35.3
50
75
383
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 40A
I
SD
= 3.2A
I
SD
= 40A, dI
SD
/dt=100A/µs
I
SD
= 40A, dI
SD
/dt=100A/µs
-
-
-
-
1.1
0.85
14.4
5.1
1.25
1.2
18.8
6.7
V
V
ns
nC
Notes:
1:
Starting T
J
= 25°C, V
DD
= 30V, V
GS
= 10V
2:
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user’s board design.
3:
R
θJA
is measured with 1.0 in
2
copper on FR-4 board
4:
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2
FDB8878 Rev. A
www.fairchildsemi.com
FDB8878 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
A
= 25°C unless otherwise noted
80
R
DS(ON)
, NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
10V
70
I
D
, DRAIN TCURRENT (A)
60
50
40
30
20
10
0
0
0.4
0.8
1.2
1.6
2.0
V
DS
, GATE TO SOURCE VOLTAGE (V)
3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.0V
5.0V
4.0V
4.5V
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
20
40
60
80
I
D
, DRAIN CURRENT (A)
5.0V
3.5V
4.0V
3.0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4.5V
10V
Figure 1. On Region Characteristics
Figure 2. On-Resistance Variation with Drain
Current and Gate Voltage
0.06
R
DS(ON)
, ON-RESISTANCE (OHM)
1.7
R
DS(ON),
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
= 40A
V
GS
=10V
I
D
=40A
0.05
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
1.3
0.04
1.1
0.03
T
J
=175
o
C
0.03
T
J
=25
o
C
0.01
2
4
6
8
0.9
0.7
- 80
- 40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
200
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On Resistance Variation with
Temperature
80
70
I
D
, DRAIN TCURRENT (A)
60
50
40
30
20
10
0
1.0
2.0
3.0
T
A
= 175
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
Figure 4. On-Resistance Variation with
Gate-to-Source Votlage
100
V
GS
= 0V
10
I
S
, REVERSE CURRENT (A)
V
DS
= 6V
1.0
T
A
= 175
o
C
0.1
T
A
= 25
o
C
T
A
= 25
o
C
T
A
= -55
o
C
0.01
T
A
= - 55
o
C
0.001
4.0
5.0
0
0.3
0.6
0.9
1.2
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
With Source Current and Temperature
3
FDB8878 Rev. A
www.fairchildsemi.com
FDB8878 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
A
= 25°C unless otherwise noted
10
VDD =15V
V
GS
, GATE- SOURCE VOLTAGE
8
CAPACITANCE (pF)
1000
C
OSS
C
RSS
100
C
ISS
10000
f = 1MHz
V
GS
= 0V
6
4
WAVEFORMS IN
ASCENDING ORDER:
ID = 40A
ID = 1A
2
0
0
4
8
12
16
20
Q
g
, GATE CHARGE (nC)
10
0.1
10
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics
500
Figure 8. Capacitance Characteristics
1000
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
100
I
AS
, AVALANCHE CURRENT (A)
100
STARTING T
J
= 25
o
C
10
I
D
, DRAIN TCURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
¼
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
10
10µs
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
STARTING T
J
= 150
o
C
100µs
1ms
DC
1
0.001
0.01
0.1
1
10
100
1
0.1
t
AV
, TIME IN AVALANCHE (ms)
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 9. Unclamped Inductive Switching
Capability
80
P
(PK)
, PEAK TRANSIENT POWER (W)
70
I
D
, DRAIN TCURRENT (A)
60
50
40
30
V
GS
= 4.5V
20
10
0
0
50
75
100
125
150
175
V
DS
, GATE TO SOURCE VOLTAGE (V)
R
θJC
= 3.17
o
C/W
V
GS
= 10V
10000
Figure 10. Safe Operating Area
1000
SINGLE PULSE
R
θJC
= 0.5
o
C/W
T
J
= 25
o
C
100
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, PULSE WIDTH (s)
Figure 11. Maximum Continuous Drain Current vs
Case Temperature
Figure 12. Single Pulse Maximum Power
Dissipation
4
FDB8878 Rev. A
www.fairchildsemi.com
FDB8878 N-Channel PowerTrench
®
MOSFET
2
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x R
θJC
+ T
C
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
SINGLE PULSE
0.01
10
-5
10
-4
Figure 13. Transient Thermal Response Curve
5
FDB8878 Rev. A
www.fairchildsemi.com
京公网安备 11010802033920号
EEWORLD
