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FDP6670AL

Description
MOSFET N-CH 30V 80A TO-220
CategoryDiscrete semiconductor    The transistor   
File Size153KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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FDP6670AL Overview

MOSFET N-CH 30V 80A TO-220

FDP6670AL Parametric

Parameter NameAttribute value
MakerON Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
Avalanche Energy Efficiency Rating (Eas)114 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)80 A
Maximum drain current (ID)80 A
Maximum drain-source on-resistance0.0065 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)68 W
Maximum pulsed drain current (IDM)240 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)95 ns
Maximum opening time (tons)46 ns
Base Number Matches1
FDP6670AL/FDB6670AL
May 2003
FDP6670AL/FDB6670AL
N-Channel Logic Level PowerTrench
®
MOSFET
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R
DS(ON)
and fast switching speed.
Features
80 A, 30 V
R
DS(ON)
= 6.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 8.5 mΩ @ V
GS
= 4.5 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low R
DS(ON)
175°C maximum junction temperature rating
D
D
G
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
±
20
(Note 1)
(Note 1)
Units
V
V
A
W
W/°C
°C
80
240
68
0.45
–65 to +175
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.2
62.5
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDB6670AL
FDP6670AL
Device
FDB6670AL
FDP6670AL
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
©2003
Fairchild Semiconductor Corporation
FDP6670AL/FDB6670AL Rev D(W)

FDP6670AL Related Products

FDP6670AL
Description MOSFET N-CH 30V 80A TO-220
Maker ON Semiconductor
package instruction FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
Avalanche Energy Efficiency Rating (Eas) 114 mJ
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V
Maximum drain current (Abs) (ID) 80 A
Maximum drain current (ID) 80 A
Maximum drain-source on-resistance 0.0065 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB
JESD-30 code R-PSFM-T3
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Maximum operating temperature 175 °C
Minimum operating temperature -65 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 68 W
Maximum pulsed drain current (IDM) 240 A
surface mount NO
Terminal form THROUGH-HOLE
Terminal location SINGLE
transistor applications SWITCHING
Transistor component materials SILICON
Maximum off time (toff) 95 ns
Maximum opening time (tons) 46 ns
Base Number Matches 1
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