Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 50 - 800V > 2N6504 Series
Maximum Ratings
(T
J
= 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, T
J
= 25 to 125°C)
2N6504
2N6505
2N6507
2N6508
2N6509
On-State RMS Current (180° Conduction Angles; T
C
= 85°C)
Average On-State Current (180° Conduction Angles; T
C
= 85°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 100°C)
Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, T
C
= 85°C)
Forward Average Gate Power (t = 8.3 ms, T
C
= 85°C)
Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, T
C
= 85°C)
Operating Junction Temperature Range
Storage Temperature Range
I
T
V
DRM
,
V
RRM
50
100
400
600
800
25
16
250
20
0.5
2.0
-40 to +125
-40 to +125
V
(RMS)
A
A
A²s
W
W
A
°C
°C
I
T (AV)
I
TSM
P
GM
P
G(AV)
I
GM
T
J
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
*Thermal Resistance, Junction to Case
*Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
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