Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
R
qJC
T
L
Max
2.0
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
T
J
= 25°C
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
T
J
= 125°C
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 2)
(I
TM
= 16 A Peak)
Gate Trigger Current (Continuous dc)
(V
D
= 12 V, R
L
= 100 Ohms)
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 V, R
L
= 100 Ohms)
Gate Non−Trigger Voltage
(Rated 12 V, R
L
= 100 Ohms, T
J
= 125°C)
Holding Current
(V
D
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, Gate Open, T
J
= 125°C)
dv/dt
−
100
−
V/ms
V
TM
I
GT
V
GT
V
GD
I
H
−
−
−
0.2
−
1.5
10
−
−
16
1.8
25
1.5
−
30
V
mA
V
V
mA
I
DRM
, I
RRM
−
−
−
−
10
2.0
mA
mA
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 1.0 ms, Duty Cycle
≤
2%.
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
I
RRM
at V
RRM
on state
I
H
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
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2
MCR218−2G, MCR218−4G, MCR218−6G
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
P(AV), AVERAGE ON‐STATE POWER DISSIPATION
(WATTS)
125
15
115
α
α
= CONDUCTION ANGLE
12
α
α
= Conduction Angle
120°
180°
60°
α
= 30°
90°
dc
105
9.0
95
dc
α
= 30°
0
1
2
6.0
85
75
60°
3
90° 120°
4
180°
5
6
7
3.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
I
T(AV)
, AVG. ON‐STATE CURRENT (AMPS)
7.0
8.0
8
I
T(AV)
, AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
Figure 1. Current Derating
Figure 2. On−State Power Dissipation
I GT , NORMALIZED GATE TRIGGER CURRENT (mA)
2.0
V
D
= 12 Vdc
1.5
1.0
0.9
0.7
0.5
0.4
0.3
-60
-40
-20
0
20
40
60
80
100
120
140
V GT , NORMALIZED GATE TRIGGER VOLTAGE
3.0
1.3
1.2
V
D
= 12 Vdc
1.0
0.9
0.7
0.5
0.4
0.3
-60
-40
-20
0
20
40
60
80
100
120
140
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Gate Trigger Current
versus Temperature
Figure 4. Typical Gate Trigger Voltage
versus Temperature
I H , NORMALIZED HOLDING CURRENT (mA)
4.0
3.0
2.0
V
D
= 12 Vdc
1.5
1.0
0.9
0.7
0.5
0.4
-60
-40
-20
0
20
40
60
80
100
120
140
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Holding Current
versus Temperature
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3
MCR218−2G, MCR218−4G, MCR218−6G
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
−T−
B
4
SEATING
PLANE
F
T
S
C
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
ON Semiconductor and the
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ADI Reference Circuit
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