BDW24/A/B/C
BDW24/A/B/C
Hammer Drivers, Audio Amplifiers
Applications
• Power Darlington TR
• Complement to BDW23, BDW23A, BDW23B and BDW23C respectively
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BDW24
: BDW24A
: BDW24B
: BDW24C
V
CEO
Collector-Emitter Voltage
: BDW24
: BDW24A
: BDW24B
: BDW24C
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
-5
-6
-8
- 0.2
50
150
- 65 ~ 150
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Parameter
Value
Units
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW24/A/B/C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BDW24
: BDW24A
: BDW24B
: BDW24C
Collector Cut-off Current
: BDW24
: BDW24A
: BDW24B
: BDW24C
I
CEO
Collector Cut-off Current
: BDW24
: BDW24A
: BDW24B
: BDW24C
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
V
CE
= - 22V, I
B
= 0
V
CE
= - 30V, I
B
= 0
V
CE
= - 40V, I
B
= 0
V
CE
= - 50V, I
B
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 3V, I
C
= - 1A
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 6A
I
C
= - 2A, I
B
= - 8mA
I
C
= - 6A, I
B
= - 60mA
I
C
= - 2A, I
B
= - 8mA
V
CE
= - 3V, I
C
= - 1A
V
CE
= - 3V, I
C
= - 6A
I
F
= - 2A
1000
750
100
- 500
- 500
- 500
- 500
-2
20000
-2
-3
- 2.5
- 2.5
-3
- 1.8
V
V
V
V
V
V
µA
µA
µA
µA
mA
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
- 200
- 200
- 200
- 200
µA
µA
µA
µA
Test Condition
I
C
= - 100mA, I
B
= 0
Min.
- 45
- 60
- 80
- 100
Typ.
Max.
Units
V
V
V
V
I
CBO
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
V
F
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Base-Emitter ON Voltage
* Parallel Diode Forward Voltage
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW24/A/B/C
Typical Characteristics
10000
V
CE
(sat)[V], SATURATION VOLTAGE
V
CE
= -3V
-2.4
I
C
= 250 I
B
-2.0
h
FE
, DC CURRENT GAIN
-1.6
1000
-1.2
-0.8
-0.4
100
-0.1
-1
-10
-0.0
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-8
-100
V
CE
= -3V
-7
I
C
[A], COLLECTOR CURRENT
-6
I
C
[A], COLLECTOR CURRENT
-10
I
C
(max). Pulsed
I
C
(max).
Continuous
-5
10
µ
s
-4
-3
100
µ
s
DC
-1
-2
-1
BDW24
BDW24A
BDW24B
BDW24C
-0.1
-1
-10
1ms
10ms
-0
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.6
-4.0
-100
-1000
V
BE
[V], BASE-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Safe Operating Area
80
70
P
C
[W], POWER DISSIPATION
60
50
40
30
20
10
0
0
25
50
o
75
100
125
150
175
200
T
C
[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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®
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
Embedded System
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