SS9014
SS9014
Pre-Amplifier, Low Level & Low Noise
• High total power dissipation. (P
T
=450mW)
• High h
FE
and good linearity
• Complementary to SS9015
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
50
45
5
100
450
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
ob
f
T
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Product
Noise Figure
Test Condition
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CB
=10V, I
E
=0
f=1MHz
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=0.2mA
f=1KHz, R
S
=2KΩ
150
0.58
60
280
0.14
0.84
0.63
2.2
270
0.9
10
Min.
50
45
5
50
50
1000
0.3
1.0
0.7
3.5
V
V
pF
MHz
dB
Typ.
Max.
Units
V
V
V
nA
nA
h
FE
Classification
Classification
h
FE
A
60 ~ 150
B
100 ~ 300
C
200 ~ 600
D
400 ~ 1000
©2002 Fairchild Semiconductor Corporation
Rev. A3, May 2002
SS9014
Typical Characteristics
100
90
1000
I
C
[mA], COLLECTOR CURRENT
80
70
60
50
40
30
20
10
0
0
I
B
= 100
µ
A
I
B
= 80
µ
A
I
B
= 60
µ
A
I
B
= 40
µ
A
I
B
= 20
µ
A
h
FE
, DC CURRENT GAIN
I
B
= 160
µ
A
I
B
= 140
µ
A
I
B
= 120
µ
A
V
CE
= 5V
100
10
10
20
30
40
50
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
1000
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
V
BE
(sat)
V
CE
= 5V
100
100
V
CE
(sat)
I
C
= 20 I
B
10
1
10
100
1000
10
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A3, May 2002
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CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. H5
PCB Design
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