MUN5336DW1,
NSBC115EPDXV6
Complementary Bias
Resistor Transistors
R1 = 100 kW, R2 = 100 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
R
1
Q
1
Q
2
R
2
R
1
(5)
(6)
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PIN CONNECTIONS
(2)
(1)
R
2
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
6
(4)
MARKING
DIAGRAMS
6
SOT−363
CASE 419B
1
36
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
36 M
G
G
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT−563
CASE 463A
1
36 MG
1
ORDERING INFORMATION
Device
MUN5336DW1T1G,
NSVMUN5336DW1T1G*
NSBC115EPDXV6T1G,
NSVBC115EPDXV6T1G*
Package
SOT−363
SOT−563
Shipping
†
3,000 / Tape & Reel
4,000 / Tape & Reel
36 = Specific Device Code
M = Month Code
G
= Pb−Free Package
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
©
Semiconductor Components Industries, LLC, 2014
1
October, 2017 − Rev. 1
Publication Order Number:
DTC115EP/D
MUN5336DW1, NSBC115EPDXV6
THERMAL CHARACTERISTICS
Characteristic
MUN5336DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
P
D
187
256
1.5
2.0
R
qJA
670
490
mW
mW/°C
°C/W
Symbol
Max
Unit
MUN5336DW1 (SOT−363) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
(Note 1)
T
A
= 25°C
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 2)
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
Junction and Storage Temperature Range
NSBC115EPDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
(Note 1)
T
A
= 25°C
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
P
D
357
2.9
R
qJA
350
mW
mW/°C
°C/W
(Note 1)
P
D
250
385
2.0
3.0
R
qJA
493
325
°C/W
188
208
−55 to +150
°C
mW
mW/°C
°C/W
R
qJL
T
J
, T
stg
NSBC115EPDXV6 (SOT−563) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
(Note 1)
T
A
= 25°C
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
P
D
500
4.0
R
qJA
T
J
, T
stg
250
−55 to +150
°C
mW
mW/°C
°C/W
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0
×
1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
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MUN5336DW1, NSBC115EPDXV6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector-Emitter Saturation Voltage (Note 4)
(I
C
= 10 mA, I
B
= 0.3 mA)
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100
mA)
(NPN)
(V
CE
= 5.0 V, I
C
= 100
mA)
(PNP)
Input Voltage (On)
(V
CE
= 0.3 V, I
C
= 3.0 mA) (NPN)
(V
CE
= 0.3 V, I
C
= 3.0 mA) (PNP)
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kW)
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
h
FE
80
V
CE(sat)
−
V
i(off)
−
−
V
i(on)
3.0
3.0
V
OL
−
V
OH
4.9
R1
R
1
/R
2
70
0.8
−
100
1.0
−
130
1.2
kW
−
0.2
Vdc
1.7
1.6
−
−
Vdc
1.2
1.2
0.5
0.5
Vdc
−
0.25
Vdc
150
−
V
I
CBO
−
I
CEO
−
I
EBO
−
V
(BR)CBO
50
V
(BR)CEO
50
−
−
−
−
Vdc
−
0.05
Vdc
−
500
mAdc
−
100
nAdc
nAdc
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle
≤
2%.
400
P
D
, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
150
(1) (2)
(1) SOT−363; 1.0
×
1.0 Inch Pad
(2) SOT−563; Minimum Pad
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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MUN5336DW1, NSBC115EPDXV6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5336DW1, NSBC115EPDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
I
C
/I
B
= 10
1000
V
CE
= 10 V
h
FE
, DC CURRENT GAIN
T
A
= −25°C
25°C
75°C
75°C
25°C
100
T
A
= −25°C
0.1
0.01
0
5
15
25
10
20
30
I
C
, COLLECTOR CURRENT (mA)
35
40
10
0.1
10
1
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
3.6
3.2
C
ob
, CAPACITANCE (pF)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
f = 10 kHz
l
E
= 0 A
T
A
= 25°C
100
I
C
, COLLECTOR CURRENT (mA)
75°C
T
A
= −25°C
10
25°C
1
V
O
= 5 V
0.1
0
5
10
15
20
25
30
V
in
, INPUT VOLTAGE (V)
35
40
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
25°C
T
A
= −25°C
75°C
10
1
0.1
0
5
10
20
15
25
I
C
, COLLECTOR CURRENT (mA)
30
35
Figure 6. Input Voltage vs. Output Current
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MUN5336DW1, NSBC115EPDXV6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5336DW1, NSBC115EPDXV6
10
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
1000
25°C
150°C
1
100
−55°C
25°C
0.1
−55°C
150°C
10
V
CE
= 10 V
1
10
20
30
40
50
0.1
1
10
100
0.01
0
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. V
CE(sat)
vs. I
C
12
C
ob
, OUTPUT CAPACITANCE (pF)
10
8
6
4
2
0
0
10
20
30
40
50
V
R
, REVERSE VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
Figure 8. DC Current Gain
150°C
−55°C
10
25°C
1
0.1
V
O
= 5 V
0.01
0
4
8
12
16
20
24
28
V
in
, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
100
−55°C
25°C
10
Figure 10. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
150°C
1
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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Microcontroller MCU
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