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NSVMUN5336DW1T1G

Description
COMPLEMENTARY DIGITAL TRA
Categorysemiconductor    Discrete semiconductor   
File Size81KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric Compare View All

NSVMUN5336DW1T1G Overview

COMPLEMENTARY DIGITAL TRA

NSVMUN5336DW1T1G Parametric

Parameter NameAttribute value
Transistor type1 NPN, 1 PNP - prebiased (dual)
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)100 kilohms
Resistor - Emitter Base (R2)100 kilohms
DC current gain (hFE) at different Ic, Vce (minimum value)80 @ 5mA,10V
Vce saturation value (maximum value) when different Ib,Ic250mV @ 300µA,10mA
Current - collector cutoff (maximum)500nA
Frequency - Transition-
Power - Max187mW
Installation typesurface mount
Package/casing6-TSSOP,SC-88,SOT-363
Supplier device packagingSC-88/SC70-6/SOT-363
MUN5336DW1,
NSBC115EPDXV6
Complementary Bias
Resistor Transistors
R1 = 100 kW, R2 = 100 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
R
1
Q
1
Q
2
R
2
R
1
(5)
(6)
www.onsemi.com
PIN CONNECTIONS
(2)
(1)
R
2
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
6
(4)
MARKING
DIAGRAMS
6
SOT−363
CASE 419B
1
36
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
36 M
G
G
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT−563
CASE 463A
1
36 MG
1
ORDERING INFORMATION
Device
MUN5336DW1T1G,
NSVMUN5336DW1T1G*
NSBC115EPDXV6T1G,
NSVBC115EPDXV6T1G*
Package
SOT−363
SOT−563
Shipping
3,000 / Tape & Reel
4,000 / Tape & Reel
36 = Specific Device Code
M = Month Code
G
= Pb−Free Package
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
©
Semiconductor Components Industries, LLC, 2014
1
October, 2017 − Rev. 1
Publication Order Number:
DTC115EP/D

NSVMUN5336DW1T1G Related Products

NSVMUN5336DW1T1G MUN5336DW1 NSBC115EPDXV6T1G
Description COMPLEMENTARY DIGITAL TRA Complementary Bias Resistor Transistors SS SOT563 RSTR XSTR TR
Transistor type 1 NPN, 1 PNP - prebiased (dual) - 1 NPN, 1 PNP - prebiased (dual)
Current - Collector (Ic) (Maximum) 100mA - 100mA
Voltage - collector-emitter breakdown (maximum) 50V - 50V
Resistor - Substrate (R1) 100 kilohms - 100 kilohms
Resistor - Emitter Base (R2) 100 kilohms - 100 kilohms
DC current gain (hFE) at different Ic, Vce (minimum value) 80 @ 5mA,10V - 80 @ 5mA,10V
Vce saturation value (maximum value) when different Ib,Ic 250mV @ 300µA,10mA - 250mV @ 300µA,10mA
Current - collector cutoff (maximum) 500nA - 500nA
Power - Max 187mW - 357mW
Installation type surface mount - surface mount
Package/casing 6-TSSOP,SC-88,SOT-363 - SOT-563,SOT-666
Supplier device packaging SC-88/SC70-6/SOT-363 - SOT-563
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