VS-MBRB1635PbF, VS-MBRB1645PbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 16 A
Base
cathode
2
FEATURES
150 °C T
J
operation
High frequency operation
Low forward voltage drop
High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
•
•
•
•
D
2
PAK
1
N/C
3
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
TO-263AB (D
2
PAK)
16 A
35 V, 45 V
0.63
40 mA at 125 °C
150 °C
Single die
24 mJ
DESCRIPTION
This VS-MBRB16... Schottky rectifier has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
16 A
pk
, T
J
= 125 °C
CHARACTERISTICS
Rectangular waveform
VALUES
16
35/45
1800
0.57
-65 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB1635PbF
35
VS-MBRB1645PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
SYMBOL
I
F(AV)
TEST CONDITIONS
T
C
= 134 °C, rated V
R
5 μs sine or 3 μs rect. pulse
Non-repetitive peak surge current
I
FSM
Following any rated
load condition and with
rated V
RRM
applied
VALUES
16
1800
UNITS
A
Surge applied at rated load condition half wave
single phase 60 Hz
Non-repetitive avalanche energy
Repetitive avalanche current
E
AS
I
AR
T
J
= 25 °C, I
AS
= 3.6 A, L = 3.7 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
150
24
3.6
mJ
A
Revision: 18-Oct-16
Document Number: 94304
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB1635PbF, VS-MBRB1645PbF
www.vishay.com
Vishay Semiconductors
SYMBOL
V
FM (1)
I
RM (1)
C
T
L
S
dV/dt
16 A
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead from top of terminal to mounting plane
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
Rated DC voltage
40
1400
8.0
10 000
pF
nH
V/μs
VALUES
0.63
V
0.57
0.2
mA
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Maximum instantaneous
reverse current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
0.07
minimum
Mounting torque
maximum
Marking device
Case style D
2
PAK
12 (10)
6 (5)
oz.
kgf · cm
(lbf · in)
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
-65 to +150
°C
-65 to +175
1.50
°C/W
0.50
2
g
UNITS
MBRB1635
Revision: 18-Oct-16
Document Number: 94304
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB1635PbF, VS-MBRB1645PbF
www.vishay.com
Vishay Semiconductors
100
100
I
R
- Reverse Current (mA)
10
1.0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
I
F
- Instantaneous
Forward Current (A)
10
0.1
0.01
0.001
0.0001
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
t
1
0.01
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
0.001
0.00001
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 18-Oct-16
Document Number: 94304
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB1635PbF, VS-MBRB1645PbF
www.vishay.com
155
Vishay Semiconductors
15
RMS limit
Allowable Case Temperature (°C)
145
Average Power Loss (W)
150
DC
140
135
130
125
10
DC
5
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0
5
10
15
20
25
120
0
0
5
10
15
20
25
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
10 000
At any rated load condition
and with rated V
RRM
applied
following surge
1000
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (μs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
applied
Revision: 18-Oct-16
Document Number: 94304
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB1635PbF, VS-MBRB1645PbF
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS- MBR
1
1
2
3
4
5
6
-
-
-
B
3
16
4
45
5
TRL PbF
6
7
2
Vishay Semiconductors product
Essential part number
B = surface mount
Current rating (16 = 16 A)
Voltage code = V
RRM
None = tube (50 pieces)
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
35 = 35 V
45 = 45 V
-
-
-
7
-
PbF = lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
VS-MBRB1635PbF
VS-MBRB1635TRRPbF
VS-MBRB1635TRLPbF
VS-MBRB1645PbF
VS-MBRB1645TRRPbF
VS-MBRB1645TRLPbF
QUANTITY PER T/R
50
800
800
50
800
800
MINIMUM ORDER QUANTITY
1000
800
800
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
www.vishay.com/doc?95407
Revision: 18-Oct-16
Document Number: 94304
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
PCB Design
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